| Allicdata Part #: | KSC3073OTU-ND |
| Manufacturer Part#: |
KSC3073OTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 30V 3A I-PAK |
| More Detail: | Bipolar (BJT) Transistor NPN 30V 3A 100MHz 1W Thro... |
| DataSheet: | KSC3073OTU Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Vce Saturation (Max) @ Ib, Ic: | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
| Power - Max: | 1W |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
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The KSC3073OTU is a type of bipolar junction transistor (BJT) designed specifically for portable and automotive applications. It is rated at 1A and 40V, making it suitable for a wide range of applications. It also has a low on-resistance of 0.7 Ohms, making it suitable for high-performance applications. It is available in both discrete and packaged formats.
A BJT is a three-layer semiconductor comprised of emitter, base, and collector regions. The base acts as an insulator between the emitter and collector. When a current is applied to the base, it produces a charge that increases the current from the emitter to the collector, thus allowing a larger current to flow through the BJT. The KSC3073OTU is specifically designed to have a low turn-on voltage, which makes it ideal for low-voltage operations.
The KSC3073OTU is commonly used in portable and automotive applications. It can be used in motor control applications, such as motor drivers and power transistors. It is also used in audio amplification, high-frequency switching, and low-noise amplifiers. Its low on-resistance makes it suitable for high-performance applications, such as power amplifiers and radio frequency amplifiers. In addition, its low turn-on voltage makes it suitable for low-voltage operations, such as in microcontrollers and device programming.
The working principle of the KSC3073OTU is based on the flow of current between the emitter and collector. When a current is applied to the base, it generates a charge that increases the flow of current from the emitter to the collector. This allows a larger current to flow through the BJT, resulting in amplified output. The amplified output is then used as the main source of power for the load or application. The KSC3073OTU can be used in both switching and linear applications.
The KSC3073OTU is specifically designed to have a low turn-on voltage and low on-resistance, making it ideal for low-voltage and high-performance applications. Its wide range of applications make it suitable for a variety of needs, including power transistors, motor drivers, audio amplifiers, high-frequency switching, low-noise amplifiers, power amplifiers, and radio frequency amplifiers. Its working principle is based on the flow of current between the emitter and collector and its low turn-on voltage makes it suitable for low-voltage operations.
The specific data is subject to PDF, and the above content is for reference
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KSC3073OTU Datasheet/PDF