KSC3233DTF Allicdata Electronics
Allicdata Part #:

KSC3233DTF-ND

Manufacturer Part#:

KSC3233DTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 2A DPAK
More Detail: Bipolar (BJT) Transistor NPN 400V 2A 1W Surface M...
DataSheet: KSC3233DTF datasheetKSC3233DTF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 1A, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Description

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KSC3233DTF application field and working principle

The KSC3233DTF is an NPN epitaxial silicon transistor of the BJT (Bipolar Junction Transistor) type. It is a three-terminal solid state device commonly used in motors, relays and power supplies. Other than these applications, the KSC3233DTF is also used in buffers and line drivers, automatic ovens, amplifiers and oscillators.

The KSC3233DTF is primarily composed of two semiconductor materials. One is the base region which is heavily doped with holes and includes a p-n junction between the two semiconductor materials. The other is the collector region which is heavily doped with electrons and connected to one of the terminals of the device.

In the off state, the base-emitter junction is reverse biased and no current flows between the collector and the emitter. When sufficient current is applied to the base, the p-n junction is forward biased, making a path for electrons to flow through. This current is then amplified by the large conduction area between the collector and the emitter.

The KSC3233DTF has a large current gain which gives it its versatility in a number of applications. This gain is measured in terms of the ratio of collector current to the base current, known as β. This ratio is responsible for the relatively low base current needed to control the collector current.

Additionally, the KSC3233DTF has an optimal operating temperature. This should be kept in mind when using the KSC3233DTF in an application. Its performance will remain stable over a wide range of temperatures which in turn contributes to its wide application area.

For more advanced applications, the KSC3233DTF has the ability to be connected in a series of transistors called a Darlington pair. This allows for a large current gain and is often used in audio amplifiers.

In conclusion, the KSC3233DTF is a versatile three-terminal device with applications in a number of electronic projects. Its working principle revolves around the forward biasing of the base-emitter junction to allow for the amplification of current from the collector to the emitter. The device’s large gain ratio gives it its advantage in a number of applications, making it an important component to consider for a range of projects.

The specific data is subject to PDF, and the above content is for reference

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