KSC3488GTA Allicdata Electronics
Allicdata Part #:

KSC3488GTA-ND

Manufacturer Part#:

KSC3488GTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 0.3A TO-92S
More Detail: Bipolar (BJT) Transistor NPN 25V 300mA 300mW Thro...
DataSheet: KSC3488GTA datasheetKSC3488GTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Power - Max: 300mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Base Part Number: KSC3488
Description

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The KSC3488GTA series is a medium power NPN silicon planar epitaxial transistor designed for digital switching applications as well as for load and line cost switching applications. The KSC3488GTA transistors are offered in a plastic TO-126 package.

The KSC3488GTA series devices are NPN transistors with small signal capabilities and a high DC current gain. They are characterized by a low collector-emitter saturation voltage, low noise, and have a high transition frequency. KSC3488GTA series transistors are designed for use in a variety of applications including data-switching amplifiers, signal amplification, switching circuits, and factory automation and control.

The working principle of the KSC3488GTA series transistors is mainly based on the principle of a bipolar junction transistor (BJT). A BJT typically consists of three terminals: the emitter, base, and the collector. A BJT operates by applying current to the base terminal, which then modulates and controls the voltage flow between the emitter and collector terminals. This is due to the fact that the emitter-base junction is forward biased, while the collector-base junction is reverse biased.

When a current is applied to the base terminal, it will cause the electrons to flow from the emitter to the collector. This movement of electrons between the emitter and collector then causes a voltage drop between the terminals, creating a current between them. This current flowing between the collector and the emitter is known as the collector current. Furthermore, the current gain of a BJT is usually expressed as the ratio of the collector current to the base current.

The KSC3488GTA series of transistors is a medium power NPN silicon planar epitaxial transistor, which makes them ideal for digital signal switching applications. The small signal capabilities and high DC current gain make the transistors suitable for a variety of applications, while the low collector-emitter saturation voltage and high transition frequency allow for high speed switching and low noise operation.

The specific data is subject to PDF, and the above content is for reference

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