KSC3503DSTSSTU Allicdata Electronics
Allicdata Part #:

KSC3503DSTSSTU-ND

Manufacturer Part#:

KSC3503DSTSSTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.1A TO-126
More Detail: Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W ...
DataSheet: KSC3503DSTSSTU datasheetKSC3503DSTSSTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Power - Max: 7W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Base Part Number: KSC3503
Description

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A KSC3503DSTSSTU is a single bipolar junction transistor (BJT) that is widely used in many electronic devices. A BJT is a type of semiconductor that consists of three basic components: an emitter, collector, and base. The KSC3503DSTSSTU is often used in low-noise applications, because it has a low noise figure and wideband frequency response. This particular device is also praised for its impressive power handling capability and excellent thermal stability.

The KSC3503DSTSSTU incorporates a unique structure and design, known as a heavily-doped pseudo-single-heterostructure. This structure consists of a single epitaxial layer grown on a silicon substrate. A heavily-doped pseudo-single-heterostructure has very good thermal resistance and excellent switching properties, which is why it is often used for high-performance applications. As a result, the KSC3503DSTSSTU is especially well-suited for audio amplifiers and other high-speed digital applications.

In terms of its application field, the KSC3503DSTSSTU is often used in various types of communication systems. In particular, it is very commonly used in digital subscriber line (DSL) modems for bridging multiple lines. Other typical applications include radio receivers, audio amplifiers, power amplifiers, and other high-speed digital applications. The KSC3503DSTSSTU can also be found in automotive amplifier systems, cellular base stations, and RF industrial systems.

The KSC3503DSTSSTU also has some unique properties that make it particularly useful for many of these applications. For example, its wideband frequency response and impressive frequency stability makes it ideal for broadband communications, while its low noise figure makes it ideal for low-noise applications. Additionally, it has a high power handling capability and excellent thermal stability.

The KSC3503DSTSSTU works by controlling the current that flows from the collector to the emitter. When there is a small current delivered to the base of the transistor, it will allow a much larger current to flow from the collector to the emitter. This is due to the phenomenon known as "current amplification," which is the most basic working principle of a transistor. By controlling the flow of current through the base, the transistor can then be used to switch between different levels of current, and thus control a variety of functions.

In conclusion, the KSC3503DSTSSTU is a single bipolar junction transistor that has many unique applications. It is commonly used in DSL modems, radio receivers, audio amplifiers, and other high-speed digital applications. Furthermore, its wideband frequency response, low noise figure, and high power handling capability make it suitable for various communication systems and other applications. By controlling the current flow between the collector and the emitter, the KSC3503DSTSSTU is able to control a variety of functions, making it an extremely useful device.

The specific data is subject to PDF, and the above content is for reference

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