KSC3502ESTU Allicdata Electronics
Allicdata Part #:

KSC3502ESTU-ND

Manufacturer Part#:

KSC3502ESTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 200V 0.1A TO-126
More Detail: Bipolar (BJT) Transistor NPN 200V 100mA 150MHz 1.2...
DataSheet: KSC3502ESTU datasheetKSC3502ESTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Power - Max: 1.2W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Description

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The KSC3502ESTU is a single bipolar junction transistor (BJT), which has a wide range of applications in various industries. The device is designed to operate at high frequencies, with a maximum operating frequency of 200 MHz. It is commonly used in high-power RF applications, such as RF amplifiers, routers, and transceivers.

The KSC3502ESTU is a NPN transistor, meaning it has an N-type base, a P-type collector, and a N-type emitter. It can be used for various applications, such as low to medium power amplification, switching, and current source applications. The current gain of the device is typically around 70.

The KSC3502ESTU has an impressive maximum collector current of 1.1 amperes, and can handle voltages up to 80 volts. The device also has a wide safe operating area, which makes it suitable for use in high power applications. It is also highly linear, with a low distortion of less than 0.1% typically.

The KSC3502ESTU features an internal Darlington configuration, which helps reduce distortion and improve power efficiency. The device is available in a wide range of packages, including a three-pin TO-220 package. It is also RoHS compliant.

The working principle of the KSC3502ESTU is quite simple. When a voltage is applied to the base of the transistor, current starts flowing from the base to the collector, and then to the emitter. The current flowing from the base to the collector is known as the collector current. The collector current is usually much greater than the base current, and this is the basis of BJT amplifiers.

The current gain of the transistor, known as the h-parameter, is the ratio of the collector current to the base current. The higher the h-parameter, the higher the current gain of the transistor. As the current gain increases, the distortion characterizing the device decreases. This allows the KSC3502ESTU to be used in high-quality audio and video applications where low distortion is required.

The KSC3502ESTU is a versatile single bipolar junction transistor that is suitable for use in a variety of applications. It has a high current gain, a wide safe operating area, and a low distortion. Its unique internal Darlington configuration helps reduce distortion and improve power efficiency. With its wide range of packages, the KSC3502ESTU is an ideal choice for high-power RF applications, such as amplifiers, routers, and transceivers.

The specific data is subject to PDF, and the above content is for reference

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