KSC815OBU

KSC815OBU is a high voltage NPN double-diffused silicon epitaxial planar type transistor, manufactured using complementary pairs and consisting of two diffused resistors. The transistor is manufactured using the most modern semiconductor technology and is designed especially for the applications of transistor array, cardenoid circuit, Darlington, and switching circuit. It can also be used in general electric circuit to replace the commonly used and older transistors.The KSC815OBU has a maximum collector emitter voltage of 80V, a maximum collector current of 0.5A and a maximum power dissipation of 6W. The resistors in the transistor have very high stability and provide excellent linear control for the transistor. It has a high frequency breakdown voltage of 2kV, an operating temperature range of -55C to +125C and a wide range of forward gain.The working principle of the KSC815OBU transistor is based on the electrical resistance of an electrical conductor. When the current is applied to the base of the transistor, the electrons will flow unrestricted through the emitter-collector section, known as the collector-emitter voltage (Vce) If the collector-emitter voltage (Vce) is less than the base-emitter voltage (Vbe) then the transistor will be in its linear operating region, acting as a linear switch, conducting current from collector to emitter. The KSC815OBU is generally used in applications that require high voltage, high power, and fast switch time. It is widely used in power switching circuits, high current amplifier circuits and voltage regulation circuits, as well as in high voltage switching and logic control circuits. The resistor allows for no extra base current for the transistor, thus providing excellent control of the switching time and power.In addition, the KSC815OBU is widely used in the design of power combiners, line drivers, multistage amplifiers, power distribution networks, switching regulators, inverters, voltage detectors, and pulse circuits. The transistor is capable of providing high voltage, high current and fast switch time in a compact and efficient package.It is an ideal choice for automotive and industrial applications, due to its low operating temperature, reliable performance, and easy installation. The KSC815OBU transistor is rated at a maximum collector current of 0.5A, a maximum collector-emitter voltage of 80V, and a maximum power dissipation of 6W. It is available in a low thermal resistance package and is capable of providing an excellent performance in applications that require high voltage and fast switching time.The KSC815OBU is an example of a modern and efficient transistor, with high voltage and current ratings, low power consumption and low thermal resistance. It is a reliable and efficient way to achieve power, high speed switching, and precision in circuits.