KSC815OTA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 15mA, 150mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 1V
Power - Max:	400mW
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	KSC815

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Introduction

KSC815OTA is a single-package power transistor that offers high current, low power consumption, and excellent thermal performance. It is suitable for a variety of applications, such as power supplies, audio power amplifiers, and switching applications. This article discusses the application field and working principle of the KSC815OTA.

Application Field

KSC815OTA is a low-threshold, high-current power transistor, which makes it suitable for a variety of power-supply and audio-amplifier applications. It is designed for audio power amplification in areas such as guitar amplifiers, automotive audio systems, and home mains power supplies. The device features small signal gain, low voltage operation and low junction-leakage characteristics, making it suitable for high-bandwidth systems.KSC815OTA is also suitable for switching applications, such as power supplies, automation systems and automotive applications. The device offers high-speed switching with fast ON and OFF times and low ON-resistance. With its low-noise operation and low power consumption, it is well-suited for low-power applications.

Working Principle

The KSC815OTA is a PNP bipolar junction transistor (BJT). It consists of a P-type semiconductor substrate and two N-type regions, embedded in a diamond-shaped package. When the emitter and base regions of the device are connected to different voltage sources, electrons are drawn from the emitter towards the base. This creates a current in the emitter-collector circuit and results in the transistor turning ON.The current in the emitter-collector circuit can be controlled by varying the amount of current flowing through the base. When a positive voltage is applied to the base, more electrons are drawn from the emitter, increasing the current in the emitter-collector circuit. Conversely, a negative voltage applied to the base will reduce the current in the emitter-collector circuit.The KSC815OTA has an advantage over other BJTs in that it does not require a high base current for large collector current. This makes it ideal for applications that require high-power output and low power consumption.

Conclusion

The KSC815OTA is a single-package power transistor that provides high current and low power consumption, and offers excellent thermal performance. The device is suitable for audio power amplifiers, power supplies and switching applications. Its working principle is based on the PNP bipolar junction transistor, with the ability to control the emitter-collector current by varying the amount of current flowing through the base. The device has an advantage over other BJTs in that it does not require a high base current for large collector current, making it an ideal choice for applications that require high-power output and low power consumption.

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