KSC839YBU Allicdata Electronics
Allicdata Part #:

KSC839YBU-ND

Manufacturer Part#:

KSC839YBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 200MHz 250m...
DataSheet: KSC839YBU datasheetKSC839YBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 12V
Power - Max: 250mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The KSC839YBU is a silicon NPN Epitaxial Planar Transistor that belongs to the Bipolar Junction Transistor (BJT) family. Due to its small size and high-speed response, it is ideal for operation in applications that require high-speed switching, such as high-frequency oscillators, pulse amplifiers, and high-frequency switching amplifiers. It has low noise, low saturation voltage, and low power consumption.

The KSC839YBU is a single transistor designed with three terminals. The collector is the most important component as it is the output terminal, while the base and emitter are the input terminals. The base and emitter are used to control the current flow between the collector and emitter. The transistor uses an electrical signal at the base terminal to control the amount of current flowing through the collector and emitter. By controlling the size of the current, it is possible to control the output emulation and power levels.

The KSC839YBU is used in a wide range of applications. Due to its high-speed response and low power consumption, it is an ideal choice for applications that require fast switching, such as high-frequency oscillators, pulse amplifiers, and high-frequency switching amplifiers. It is also used in voltage regulators, audio amplifiers, power amplifiers, and digital circuits. It is suitable for use in high-temperature and high-voltage environments.

The KSC839YBU is designed to work based on the principle of current gain. This means that the base current is amplified and the collector-emitter current is increased. The current gain is determined by the amount of current that is flowing through the transistor. The voltage gain is determined by the voltage applied across the collector and emitter. The higher the voltage, the higher the gain. The impedance is determined by the impedance of the entire circuit.

In order to use the KSC839YBU effectively, it is important to understand the proper operating conditions. The transistor should be operated in an environment that is thermally stable and cool. It should also be kept away from moisture, dust, and oil. The transistor should also be powered by an appropriate voltage and current. Finally, it should be connected to the proper load.

The KSC839YBU has many advantages that make it an attractive choice for many applications. First, it has low power consumption and low saturation voltage. Second, it has a high-speed response and low noise. Finally, it is highly reliable and can operate in high temperatures and high voltage environments.

The KSC839YBU is an ideal choice for applications that require fast switching, low power consumption, low noise, and reliable performance. It is an excellent choice for voltage regulators, audio amplifiers, power amplifiers, and digital circuits. It can also be used in high-temperature and high-voltage environments.

The specific data is subject to PDF, and the above content is for reference

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