KSC900GTA

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KSC900GTA is a bipolar junction transistor (BJT) made by Toshiba. It is a single-package discrete semiconductor device, typically used in audio amplifiers, mixers and electronic circuits. This device features an outstanding performance in terms of its rapid switching speed, nominal noise level, power dissipation and low collector-emitter saturation voltage. The device is suitable for general-purpose switching, amplification and driving applications.

The KSC900GTA is a NPN-type transistor with a collector-to-emitter saturation voltage of 0.4 V, a switching speed of 2 GHz, a collector-emitter breakdown voltage of 15V and a collector capacitance of 3.3 pF. It is a general-purpose amplifier with a power dissipation of 250 mW, a forward current transfer ratio of 250 at 3.3V, a collector-emitter saturation voltage of 0.4V and a collector-emitter pinch off voltage of 2.0V. It is suitable for use in audio amplifiers, power supplies, relay drivers, detectors and amplifiers, and switching and driver circuits.

The working principle of KSC900GTA is based on the principle of NPN biasing. The transistor is biased using positive feedback, with the base current being regulated by a resistor connected to the base. As the base current increases, the transistor’s collector voltage begins to drop, allowing more current to flow into the collector. The collector current is then amplified and the transistor enters saturation.

The KSC900GTA is available in two versions, one with a base current of 375µA and the other with 500µA. Each version can withstand maximum collector-emitter voltages of 15V and allow maximum collector current of 1A. The transistor is suitable for use in a variety of applications, such as audio amplifiers, radio receivers, analog signal processing circuits, automotive electronics and power supplies.

In summary, the KSC900GTA is a single-package bipolar junction transistor (BJT) with excellent characteristics in terms of its rapid switching speed, nominal noise level, power dissipation and low collector-emitter saturation voltage. It is suitable for use in a variety of applications, from audio amplifiers and signal processors to automobiles and power supplies. The device works according to the principle of NPN biasing, allowing for a current gain of 250 at 3.3V and a maximum operating collector-emitter voltage of 15V.

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