KSC945GBU

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Transistors - Bipolar (BJT) - Single

The KSC945GBU (2SB945 / P2SB945) is a high power BJT transistor for use in switching, amplifier and general purpose applications. It utilizes a Bi-Polar Junction Transistor (BJT) construction and features NPN design. It is manufactured by FUJI Semiconductor Technology Co., Ltd. The device is rated for up to 50 Watt of continuous operation.

The KSC945GBU is typically used in audio amplifiers, audio and video inbricks, power switching circuits, power amps and LINBUS systems. It is also suitable for use as a driver in high power applications. The maximum collector current of the device is specified at 25 Amps with a maximum DC Collector-Emitter volts of 200V. The KSC945GBU features a high collector to emitter saturation voltage and fast switching times for improved performance in high frequency applications.

Working principle

Bipolar Junction Transistors (BJT) are current-controlled switches and amplifiers. This type of transistor has two junctions, one between the collector and the emitter and the other between the base and the emitter. The two junctions are further divided into two regions, forward and reverse. The collector to emitter junction is the forward junction, which controls the amount of current flowing from the collector to the emitter. The base to emitter junction is the reverse junction, which controls which direction, either the collector or the emitter, the current flows.

When an electric signal is applied to the base, it creates a small current between the base and emitter that controls the bipolar transistor. The electric signal flowing through the emitter creates a current flowing between the collector and emitter. This current is much stronger than the current flowing through the base and emitter, thus allowing it to effectively control a larger amount of current flowing in either direction. This is the basic principle of operation of a bipolar transistor.

Application Field

The application field of the KSC945GBU is primarily in audio and power switching circuits and power amps. Its high power rating and low on-resistance makes it a great choice for high-power applications requiring fast switching for improved performance and better efficiency. It can also be used in LINBUS systems, audio inbricks, audio amplifiers and many other power applications.

Applications featuring the KSC945GBU often require current sensing to effectively drive the circuit. The KSC945GBU can be easily driven by an external current sensing element, meaning it requires minimal external circuitry. This feature, along with its excellent thermal characteristics and fast switching time makes it a great choice for any power application.

Conclusion

The KSC945GBU is a high power BJT transistor suitable for use in high power audio and switching applications. It features excellent thermal characteristics, fast switching times and low on-resistance, making it a great choice for any power application. Its ability to be easily driven by an external current sensing element makes it highly flexible and ideal for use in various power applications.

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