Allicdata Part #: | KSC945OBU-ND |
Manufacturer Part#: |
KSC945OBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.15A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 300MHz 250m... |
DataSheet: | KSC945OBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 1mA, 6V |
Power - Max: | 250mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSC945 |
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Transistors - Bipolar (BJT) - Single
KSC945OBU is a bipolar transistor manufactured by Seoul Semiconductor Company that is commonly used in a wide array of applications and devices. This type of transistor, known as a PNP bipolar junction transistor, has a maximum collector current of 0.1 Amp and a maximum power dissipation of 2 watts. To understand how KSC945OBU is advantageous to these applications, it is important to understand how it works in basic terms.
Working Principle
A KSC945OBU is a three-terminal device, usually consisting of two collector terminals and an emitter. Like all BJTs, it relies on the type of base-collector junction created to produce a flow of current under an applied voltage. It relies on a PN (positive-negative) P-type semiconductor connecting the emitter and the base to form a diode junction, which is used to control the flow of current between the collector and the emitter.
When no bias is applied, the junction between the emitter and the collector is reverse biased, meaning that it creates a small electric field that opposes the flow of electrons, effectively inhibiting the flow of current. Applying a positive bias to the base creates a forward bias effect within the PN junction, allowing the electrons to flow freely between the emitter and collector as an electric current.
In addition to the usual biasing, KSC945OBU is protected from overvoltage or short circuits due to its built-in protection diodes connected between each terminal. These diodes reduce the chances of the transistor being damaged by overvoltage or short-circuited by diverting excess current.
Advantages of KSC945OBU
The main advantages of KSC945OBU are its low voltage dropping capability and its high-frequency characteristics. When used in low-voltage applications, the low voltage dropping characteristics of KSC945OBU allow it to be used with lower voltage levels than other BJTs, making it a more cost-effective option. It also exhibits a relatively high frequency response, meaning that it is suitable for use in radio frequencies and other high-frequency applications.
Applications
KSC945OBU is used in a wide variety of applications, particularly in low voltage and high frequency applications. It is commonly used as a switch in audio amplifiers, portable radios, alarms, telephone amplifiers, and various other electronic circuits. It is also used to build amplifiers and transistor circuits, as well as for voltage regulation applications. Furthermore, it can be used in high-frequency amplifiers, RF (radio frequency) amplifiers, and switching applications.
Conclusion
KSC945OBU is a common bipolar junction transistor that is used in a variety of applications and devices. It is advantageous due to its low-voltage dropping capabilities and high-frequency characteristics. It is used as a switch in audio amplifiers, portable radios, alarms, telephone amplifiers, and other electronic circuits, as well as for voltage regulation applications, building amplifiers and transistor circuits, and high-frequency amplifiers.
The specific data is subject to PDF, and the above content is for reference
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