KSD362N Allicdata Electronics
Allicdata Part #:

KSD362N-ND

Manufacturer Part#:

KSD362N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 70V 5A TO-220
More Detail: Bipolar (BJT) Transistor NPN 70V 5A 10MHz 40W Thro...
DataSheet: KSD362N datasheetKSD362N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Power - Max: 40W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Description

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The KSD362N is a bipolar junction transistor (BJT) composed of a single layer of silicon material. The KSD362N is a NPN transistor with a high gain, low power dissipation, and low noise. It is also capable of operating at high frequencies with high power efficiency. The device is available in both through-hole and surface mount packages.

The KSD362N is used in a variety of applications, including automotive, industrial, audio, and medical. In automotive applications, it is used for control and switching applications, including the control of relays and actuators, power switches, and power management applications. In industrial applications, it is used for power supply switching, servo control, and motor control. It is also used for audio applications such as amplifiers, mixing consoles, and audio processors.

The KSD362N operates in a similar fashion to other bipolar transistors. It consists of a base, collector, and emitter. The base is negatively charged, while the collector is positively charged. When current flows through the base, it causes electrons to be drawn from the collector to the emitter, which increases the voltage at the collector and decreases the voltage at the emitter. This causes a change in the current through the collector, which can be used for various applications.

The KSD362N has several advantages over other transistors. One is its high gain-bandwidth product, which is the ratio of the gain of the transistor over its bandwidth. This enables the transistor to switch very rapidly, making it ideal for high-speed applications. Its low power dissipation also makes it energy efficient, which is beneficial in many applications.

The KSD362N is a versatile and reliable option for many applications. Its high gain-bandwidth product, low power dissipation, and low noise make it ideal for a variety of applications. Its through-hole and surface mount packages make it easy to use in a variety of environments. It is also a cost-effective option for many projects. With its excellent performance, the KSD362N is a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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