KSD363RTU

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	6A
Voltage - Collector Emitter Breakdown (Max):	120V
Vce Saturation (Max) @ Ib, Ic:	1V @ 100mA, 1A
Current - Collector Cutoff (Max):	1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 1A, 5V
Power - Max:	40W
Frequency - Transition:	10MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	KSD363

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Introduction

KSD363RTU is a general-purpose transistor designed for switching applications. It is a single transistor in a three-lead package and is commonly used in amplifiers and receivers. The transistor is manufactured by a variety of vendors and comes in different sizes and shapes.

Application fields of KSD363RTU

The most common applications of KSD363RTU are in amplifier circuits, instrumentation, and audio systems. The transistor provides switching, amplification, and protection capabilities. It can be used in low-noise amplifier circuits, voltage-controlled amplifiers, and pulse-width modulation (PWM) switches.The transistor is also used in radio and television receivers, medical devices, and computers. Additionally, it can also be found in automotive and aerospace applications.

Working principle of KSD363RTU

At the heart of KSD363RTU is a basic bipolar junction transistor (BJT) device. It consists of three layers: an emitter, a base, and a collector. The base-to-emitter voltage, VBE, determines the current flow through the transistor.When a voltage is applied to the base of the transistor, electron flow is generated from the emitter to the collector. The electrons flow through the transistor and current flows in the external circuit. The flow of current is modulated by the applied base-to-emitter voltage. The current flow increases with increasing base-to-emitter voltage until the transistor reaches its saturation limit.When the transistor is saturated, the collector-to-emitter voltage is equal to the base-to-emitter voltage and the current flow is limited. If a higher base-to-emitter voltage is applied, the transistor will enter a state of reverse bias and the collector-to-emitter voltage will increase. This allows the transistor to act as a switch and open and close the current flow.

Conclusion

KSD363RTU is a single-transistor device well-suited for switching and low-noise applications. The transistor is manufactured with a wide variety of shapes and sizes and is designed for use in a variety of applications. The device uses a basic bipolar junction transistor architecture and operates by modulating the current flow through the transistor based on the applied base-to-emitter voltage. This allows it to operate as a switch controlling the current flow in the circuit.

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