KSD363OTU Allicdata Electronics
Allicdata Part #:

KSD363OTU-ND

Manufacturer Part#:

KSD363OTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 120V 6A TO-220
More Detail: Bipolar (BJT) Transistor NPN 120V 6A 10MHz 40W Thr...
DataSheet: KSD363OTU datasheetKSD363OTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 5V
Power - Max: 40W
Frequency - Transition: 10MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: KSD363
Description

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The KSD 363 OTU is a single bipolar junction transistor (BJT) designed for low voltage, high efficiency applications. It has a high current output of 1 Ampere and an operating voltage range of 10 volts, making it suitable for applications such as ‘switching and signal conditioning’ control circuits.

KSD 363 OTU has two separate power terminals – the Base and the Emitter. The Base is connected to the signal terminal of the circuit, while the Emitter is connected to the signal ground. The Base can be biased directly or through an external resistor. The beneficial advantage of this transistor is that it allows for low input/output capacitance, which increases the efficiency of the circuit.

KSD 363 OTU has two main configurations – the NPN and the PNP type transistors. As the name suggests, the NPN transistor is current-controlled, meaning the current flowing through the Base controls the current flowing through the Emitter. On the other hand, the PNP transistor works in the opposite manner and is voltage-controlled. That is, the voltage applied to the Base controls the current flowing through the Emitter.

In both NPN and PNP configurations, the current amplification depends on the amount of current flowing through the Base. The current amplification can be expressed as the Transconductance (gm) – the ratio of Emitter current (IE) to Base current (IB). Transconductance and other characteristics of the KSD 363 OTU can be easily obtained by analyzing the relevant datasheet.

The KSD 363 OTU can be used in many different applications, such as switching, amplification, signal conditioning, current mirrors and so on. In switching applications, the transistor acts as a switch, allowing current to flow or blocking it depending on the voltage applied in the Base. In signal conditioning applications, the transistor works as an amplifier, allowing for gains in signal amplitude and distortion suppression. In current mirror configurations, the KSD 363 OTU can also be used to maintain constant current regardless of fluctuating load conditions.

The KSD 363 OTU is a reliable, low cost, and high efficiency single bipolar junction transistor with a wide range of application fields and uses. As such, it is an ideal choice for many different applications in electronics, from switching and signal conditioning to current mirroring.

The specific data is subject to PDF, and the above content is for reference

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