KSE44H11

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The KSE44H11 is a single bipolar transistor that is well-suited for general purpose switching and signal amplifying applications. The transistor is available in a through-hole package and comes with a 2.5V maximum collector-emitter saturation voltage. It has a power dissipation of 400mW and a collector current of 150mA. The device has a low noise figure, making it ideal for applications requiring high signal fidelity.

The KSE44H11 has a silicon NPN device structure composed of a base, emitter, and collector. This transistor offers low-voltage switching performance and operation with an emitter-base breakdown voltage of 6V (minimum). This feature makes the transistor suitable for use with logic level circuits operating at low voltage levels. The KSE44H11 also features a large collector-base capacitance, which makes it perfect for high-frequency applications, such as audio amplification.

The transistor offers two modes of operation: common emitter mode and common base mode. In common emitter mode, the base and collector lead and form a forward-biased diode. This allows a small current to flow from the base to the collector and amplifies the signal as it passes from the collector to the emitter. The amplified signal is then sent to the output. In common base mode, the base and emitter lead and form a reverse-biased diode. This creates a current recombination process, which maintains the base-collector current by controlling the voltage applied to the base.

The KSE44H11 is suitable for use in a variety of applications, such as audio amplifiers, modulators, detectors, oscillators, and switching circuits. Additionally, the transistor is well-suited for use in digital applications such as logic gates, flip-flops, and digital to analog converters. The transistor offers reliable operation, low power consumption, and excellent thermal characteristics.

In summary, the KSE44H11 is a low-cost, high-performance single bipolar transistor that is great for a variety of applications. It offers two modes of operation, common emitter and common base, and offers excellent thermal and power saving characteristics. The transistor is well-suited for digital and analog applications, and is available in a through-hole package. It is perfect for applications requiring power-efficient operation, high signal fidelity and long-term reliability.

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