Allicdata Part #: | KSE45H8-ND |
Manufacturer Part#: |
KSE45H8 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 10A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 10A 40MHz 1.67W T... |
DataSheet: | KSE45H8 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 400mA, 8A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 2A, 1V |
Power - Max: | 1.67W |
Frequency - Transition: | 40MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | KSE45H |
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Bipolar Junction Transistors (BJTs) are widely used in many electronic and electrical applications. One of the most popular types of BJT is the KSE45H8. It offers excellent performance, high current gain and low noise characteristics, making it suitable for a range of applications. In this article, we will take a look at the application field and working principle of the KSE45H8.
The KSE45H8 is a low power, high gain BJT capable of delivering up to 60V. This makes it well suited to a wide range of applications including audio amplifiers, medical equipment, power supplies, automotive electronics, and even industrial equipment.
One of the main advantages of the KSE45H8 is its low power consumption. It requires only 1.0mA of current to operate, meaning it can be used in portable applications where power consumption is a concern. It is also reasonably priced, making it a popular choice for hobbyists and enthusiasts.
The KSE45H8 BJT is available in both NPN and PNP configurations and can handle up to 1.5A of current at up to 60V. This makes it suitable for applications such as audio amplifiers, relays and DC motors. Additionally, the KSE45H8 has excellent frequency response and power gain, making it a great choice for both audio and power applications.
In terms of operation, the KSE45H8 has a base-collector-eminator configuration. The transistor operates in three regions: the active region, the cutoff region, and the saturation region. In the active region, the base-emitter junction is forward biased, allowing current to flow between the collector and emitter. In the cutoff region, the base-emitter junction is reversed biased, blocking current flow. In the saturation region, the base-emitter junction is forward biased and the base-collector junction is reversed biased, allowing current to flow freely.
The KSE45H8 has a maximum current gain of approximately 150. This means it can amplify a small input signal to a larger output signal. It is also a very reliable device, with a long service life. As a result, it is often used in critical applications which require a reliable BJT.
In summary, the KSE45H8 is an excellent low power, high gain BJT. It is well suited to audio, power, medical and automotive applications and is a reliable and cost effective choice. With a wide range of features, including a maximum current gain of 150, it is well suited to projects requiring a reliable, powerful BJT.
The specific data is subject to PDF, and the above content is for reference
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