KSE45H11TU

KSE45H11TU is a single bipolar junction transistor (BJT) specifically created for telecom applications. It is an NPN silicon transistor with a maximum gain bandwidth product of 0.3 GHz, which makes it ideal for use in communications and related systems. With its high gain characteristic, this bipolar transistor is particularly suitable for use in RF amplifiers, PA’s, mixers, detector stages, switches and many more. The KSE45H11TU is the perfect choice for systems which require high performance at low prices.

In order to understand the KSE45H11TU’s working principle, its three pins should be considered. The first one (base) is the control pin, also known as the input current. This current is determined by an external voltage or current. The second one (collector) is the output current, which is obtained from the input current. The last one (emitter) is the reference pin, where most of the input current will be discharged.

Now, let’s consider the main application fields of KSE45H11TU. The device is ideal for applications such as RF amplifiers, power amplifiers, mixers, detector stages and switches. It can also be used in communications like modulators, drivers and local oscillators. Furthermore, it is also suitable for many other circuits requiring low noise figure, low distortion and high linearity. The device also features a high gain bandwidth product of 0.3GHz, making it suitable for high-speed applications.

KSE45H11TU offers excellent stability under different environmental conditions. It features an excellent hFE (current gain) stability over temperature. Its collector-emitter voltage is able to withstand up to 40V, allowing it to be used in a signal transmission system with high input voltage. It also includes a built-in protection diode, which facilitates handling and reduces cost. Due to its high gain bandwidth product, the transistor can easily perform small signal amplification and switching applications, thus making it quite versatile.

In conclusion, KSE45H11TU is a single bipolar junction transistor ideal for telecom applications with its high gain bandwidth product, low noise figure, low distortion and high linearity. This device is suitable for many applications areas like RF amplifiers, PA’s, mixers, detector stages and switches. The device features a maximum voltage of 40V, an excellent hFE stability over temperature and a built-in protection diode, reducing cost and facilitating handling. KSE45H11TU is the perfect choice for systems which require high performance at low prices.