KSH210TM Discrete Semiconductor Products

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The KSH210TM is a high-voltage, ultrahigh-speed bipolar junction transistor (BJT) designed for demanding RF applications. This device is one of a series of lateral-structure BJTs developed for the next generation of wireless communication products. It features an extremely high breakdown voltage, high switching speed, and low on-resistance for superior linearity.

The KSH210TM is well suited for use in high-power RF amplifiers and switching circuits. With its high-speed performance, the KSH210TM is also a great choice for applications that require switching at high frequencies such as GSM, WCDMA, or WiMAX. The low gate-drain charge ensures fast turn-off while the low on-resistance ensures low switching losses. Thanks to its excellent linearity, the KSH210 is ideal for applications where accuracy is a must such as 5G or V2X applications.

The operating principle of the KSH210TM can be understood by inspecting its schematic diagram. The device has three terminals, the base, the emitter, and the collector. When a voltage is applied between the base and the emitter, a current flows between the two terminals. This current is called the base current and its magnitude depends on the applied voltage. As the base current increases, the collector current also increases thus allowing the device to be used for amplification.

The KSH210TM also features an ultra-high breakdown voltage of 800V, which allows it to be used in high-voltage switching applications such as automotive and industrial electronics. Its high switching speed allows for fast turn-on and turn-off times, making it an ideal choice for fast switching requirements. Thanks to its low on-resistance and low gate-drain charge, the KSH210TM is capable of very low switching losses, ensuring power efficiency.

In summary, the KSH210TM is an advanced high-voltage, ultrahigh-speed bipolar junction transistor designed for the next generation of wireless communication products. With its high breakdown voltage, high switching speed, and low on-resistance, the KSH210TM is a great choice for high-power RF amplifiers and switching circuits. Thanks to its low switching losses, it is also ideal for high-precision applications such as 5G and V2X. With its ultra-high breakdown voltage, the KSH210TM is an excellent choice for high-voltage switching applications.

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