KSH29ITU Allicdata Electronics
Allicdata Part #:

KSH29ITU-ND

Manufacturer Part#:

KSH29ITU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 1A DPAK
More Detail: Bipolar (BJT) Transistor NPN 40V 1A 3MHz 1.56W Sur...
DataSheet: KSH29ITU datasheetKSH29ITU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Base Part Number: KSH29
Description

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KSH29ITU transistors are a special type of bipolar junction transistors (BJT) designed specifically for high current and frequency applications. They are often used in RF/microwave, broadband, and audio amplifier designs and also have a wide range of application in automotive, consumer electronics, and industrial applications.

KSH29ITU transistors are composed of two PN junction layers, one between the emitter and base terminals, and the other between the collector and the base. When current is applied to the base, the majority carriers (holes or electrons) which are present in the base region travel to the emitter and collector regions, thus establishing the necessary conditions for signal amplification.

The working principle of a KSH29ITU transistor is based on two physical phenomena – the physics of controlling current and the development of the base-collector junction’s internal resistance. The current flow from the collector to the emitter is dependant on the base current and the base-collector junction’s internal resistance. This can be controlled using the base current and controlling either the terminal resistance of the base-emitter junction, or the width and depth of the base-collector junction.

KSH29ITU transistors are used in a variety of circuit designs, from amplifiers and analog-to-digital converters, to high-speed logic circuits and motor controls. They are particularly suited to high-frequency, high-speed, and harsh environment circuits, due to their ability to withstand strong voltages and current densities. They are also capable of handling high power levels and feature extremely low noise and distortion levels.

KSH29ITU transistors are also used in applications demanding high current or power and high frequency performance. In particular, they are often found in switching circuits, such as power supplies, and power conversion systems, as well as motor control circuits.

In addition to the aforementioned uses, KSH29ITU transistors are also used in RF and microwave applications, including high power amplifiers, antenna gain boost and phase-shift circuits, and in applications for military aircraft and space systems.

KSH29ITU transistors are a specialized type of bipolar junction transistors that have been designed specifically for high current and frequency applications. They have a wide range of applications in automotive, consumer electronics, industrial, and RF/microwave applications, due to their great ability to withstand strong voltages, current densities and power levels, as well as their low noise and distortion levels.

The specific data is subject to PDF, and the above content is for reference

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