Allicdata Part #: | KSK595HMTF-ND |
Manufacturer Part#: |
KSK595HMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 1MA 100MW SOT23 |
More Detail: | JFET N-Channel 1mA 100mW Surface Mount SOT-23-3 |
DataSheet: | KSK595HMTF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0): | 150µA @ 5V |
Current Drain (Id) - Max: | 1mA |
Voltage - Cutoff (VGS off) @ Id: | 600mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 3.5pF @ 5V |
Power - Max: | 100mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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KSK595HMTF is a JFET, a type of field-effect transistor (FET). FETs are active electronic devices made from a semiconductor material such as silicon. They are used in a variety of applications, from low-level analog signal displays to high-speed computer circuits. In particular, JFETs are used for a range of power levels in digital circuits, audio amplifiers, and high-frequency communication systems.
The KSK595HMTF is a depletion-mode N-channel JFET. It has an on-state drain current of 0.4 mA, an off-state drain current of 0.02 mA, and a maximum drain-source voltage of 30V. It is designed to be used in voltage amplifiers, current regulators, power control circuits, and other applications requiring precise voltage control. It is ideal for applications involving the control of currents over a wide range of temperature.
The working principle of the KSK595HMTF FET is based on the behavior of an electrical field in a semiconductor material. The JFET has three regions of doped semiconductor material — the gate, the source, and the drain — separated by an insulating layer. The charge carriers in the material determine the resistance between the source and the drain. When a voltage is applied to the gate, a field is generated, which controls the charge carriers, allowing for the control of the resistance.
By varying the voltage on the gate, the resistance between the source and the drain can be adjusted. This allows for precise control of the current flowing through the device, making it ideal for devices that require high levels of accuracy in the control of current. In addition, since the current can be precisely controlled, the power losses associated with the device can be reduced significantly.
The KSK595HMTF is a versatile device that can be used in a variety of applications. Its robust design and combination of current control and voltage control makes it ideal for use in low-level analog displays, high-speed computer circuits, and other applications requiring precise voltage control. As a depletion-mode N-channel JFET, the device can be used to control heavy power loads, and its wide range of temperature resistance allows for precise control over currents in high-temperature environments.
In summary, the KSK595HMTF is a versatile depletion-mode N-channel JFET that is designed to be used in voltage amplifiers, current regulators, power control circuits, and other applications requiring precise voltage control. It has an on-state drain current of 0.4 mA, an off-state drain current of 0.02 mA, and a maximum drain-source voltage of 30V. The device is capable of precise control of currents over a wide range of temperatures, making it ideal for devices that require high levels of accuracy in the control of current.
The specific data is subject to PDF, and the above content is for reference
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