KSK596PBWD Allicdata Electronics
Allicdata Part #:

KSK596PBWD-ND

Manufacturer Part#:

KSK596PBWD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 20V 0.1W TO-92S
More Detail: JFET N-Channel 20V 1mA 100mW Through Hole TO-92S
DataSheet: KSK596PBWD datasheetKSK596PBWD Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 20V
Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Base Part Number: KSK596
Description

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JFETs (Junction Field Effect Transistors) are semiconductor devices used for controlling the current that flows in an electronic device. The KSK596PBWD is an N-channel Junction Field Effect Transistor (JFET) that is commonly used for switching and amplifying both DC and audio signals.

The KSK596PBWD has a small footprint and is available in a wide range of package styles. It is also quite robust, making it well suited for use in high-reliability applications. The KSK596PBWD can be used in both analog and digital circuits, making it a versatile component that can be used in a wide variety of applications.

The main application fields of the KSK596PBWD are switching and amplifying DC and AC signals, especially audio frequency signals. It can be used as an amplifier in audio systems, where it is used to increase the voltage or current of the signal in order to drive loudspeakers. The KSK596PBWD can also be used for switching both low- and high-power signals, making it suitable for a wide range of applications.

The working principle of the KSK596PBWD is based on the effect of an electric field on a channel of conductive material. The KSK596PBWD is an N-channel JFET, which means that it has a p-type semiconductor channel between two n-type regions. When a source-drain voltage is applied across the two n-type regions, a field-effect ‘channel’ appears between them. This ‘channel’ is responsible for controlling the current that flows through the transistor.

The current flowing through the transistor is controlled by applying a gate voltage. The gate voltage is applied to the p-type region, which modulates the electric field in the channel and thus, the current that can flow through the entire device. This process is known as ‘gate modulation’, and is the basic principle of the KSK596PBWD.

The KSK596PBWD is a versatile device with a wide range of applications and uses. It can be used for switching, amplifying, and modifying both DC and AC signals. The device is robust and reliable, and is therefore well suited for use in high-reliability applications. Furthermore, the KSK596PBWD has a small footprint and is available in a wide range of package styles, making it highly desirable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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