Allicdata Part #: | KSK596ABU-ND |
Manufacturer Part#: |
KSK596ABU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 20V 0.1W TO-92S |
More Detail: | JFET N-Channel 20V 1mA 100mW Through Hole TO-92S |
DataSheet: | KSK596ABU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 20V |
Current - Drain (Idss) @ Vds (Vgs=0): | 100µA @ 5V |
Current Drain (Id) - Max: | 1mA |
Voltage - Cutoff (VGS off) @ Id: | 600mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 3.5pF @ 5V |
Power - Max: | 100mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Short Body |
Supplier Device Package: | TO-92S |
Base Part Number: | KSK596 |
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The KSK596ABU is an N-channel JFET based transistor. It is used in a variety of applications that involve voltage and current amplification, as well as in applications that require low voltage and low current protection devices. Because of its low input impedance and relatively high drain-source breakdown voltage, it is widely used in logic-level and small-signal analog circuits.
The KSK596ABU is designed to operate in a variety of conditions, including both temperature extremes and a wide range of conditions. It has an extended operating temperature range of -55°C to +150°C, and a recommended maximum junction temperature of +150°C. Additionally, it has a power dissipation rate of 75 mW.
The KSK596ABU is composed of two layers of silicon between a top and bottom metal layer. The top metal layer serves as the gate of the transistor, the bottom metal layer is its source, and the two layers of silicon form the drain. This unique construction provides excellent temperature stability and reliability, as well as low input capacitance and current flow.
The KSK596ABU has an exposed gate and drain, allowing for direct wiring to the transistor. Additionally, it also has a high forward transfer ratio, which makes it ideal for current amplification and protection devices. Its low input impedance also makes it well-suited to digital logic and RF devices.
The KSK596ABU is capable of operating over a wide range of voltage and current levels. It has a very low on-resistance of 0.41 ohms and a breakdown voltage of 38 V. It also has a drain-source breakdown voltage of 15.6 V, a drain-source resistance of 0.22 ohms, and an off-state current leakage of 0.04µA.
The KSK596ABU is a dynamic device, meaning it can be used to control the voltage or current between its source and drain. It works by reacting to the gate voltage applied to it in order to control the current flow between the source and the drain. The higher the gate voltage, the higher the current flow. This makes it useful for controlling the output of a device, or for providing protection against overcurrent or overvoltage.
The KSK596ABU can be used in both switching and linear modes. In switching mode, it can be used to switch between two voltage levels, while in linear mode, it can be used to regulate the current flow between its source and drain. This makes it a versatile and reliable transistor for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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