KSP5179TA Allicdata Electronics
Allicdata Part #:

KSP5179TA-ND

Manufacturer Part#:

KSP5179TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 12V 0.05A TO-92
More Detail: Bipolar (BJT) Transistor NPN 12V 50mA 2GHz 200mW T...
DataSheet: KSP5179TA datasheetKSP5179TA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Power - Max: 200mW
Frequency - Transition: 2GHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Description

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KSP5179TA Application Field and Working Principle

The KSP5179TA is a single bipolar junction transistor, commonly known as a BJT. It is a type of transistor that utilizes both electrons and holes as charge carriers.

The KSP5179TA is mainly used in low-frequency circuit designs and amplifier applications such as public address systems, radio receivers, natural sympathy amplifiers, and preamplifiers. They are also used in electronic transducers such as microphones, speakers, buzzers, and headsets.

Construction and Physical Characteristics

The KSP5179TA is composed of three layers. The first layer is a base made of semiconductor material, while the second layer acts as the emitter, which is a heavily doped region of the base. The third layer is the collector, which is a lightly doped semiconductor material.

The KSP5179TA has a voltage rating of up to 45 volts and a maximum collector current of up to 1.5A. It also has a power dissipation rating of up to 1 watt. The transistor also has an operating temperature of -55°C to +150°C, making it suitable for use in a wide range of temperature environments.

Working Principle

The KSP5179TA is a bipolar junction transistor. It is based on a simple concept: when a potential difference is applied across two regions, electrons and holes move in opposite directions to balance the effect on the surrounding area. This simple concept is what makes transistors so important in modern electronics.

When used as an amplifier, the KSP5179TA works by using the base-emitter junction as an input device. A voltage or current is applied to the base, causing changes in the potential of the emitter. The collector is then connected to a load which will receive the changes in the emitter current.

In addition to being used as an amplifier, the KSP5179TA may also be used as a switch in digital logic circuits. When used in this manner, the base-emitter junction acts as a digital switch, allowing current to flow from the collector to the emitter when a certain voltage is applied to the base. This switching effect is what makes the KSP5179TA so useful in digital logic applications.

Conclusion

The KSP5179TA is a single bipolar junction transistor, commonly known as a BJT. It is mainly used in low-frequency circuit designs and amplifier applications. Its three layer construction consists of a base, emitter, and collector. Its voltage rating is up to 45 volts and its maximum collector current is up to 1.5A. Its primary use is as an amplifier and a switch in digital logic circuits.

The specific data is subject to PDF, and the above content is for reference

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