
Allicdata Part #: | KSP56TF-ND |
Manufacturer Part#: |
KSP56TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 625mW... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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The KSP56TF, also known as Bipolar Junction Transistor (BJT) is typically used in many industrial, consumer and automotive applications. Due to its small size, low cost, and high switching speed, the KSP56TF is becoming increasingly popular across a wide range of applications.
The KSP56TF is an NPN type BJT with a maximum collector current of 300mA and a maximum collector-to-emitter voltage of 30V. It has a gain of 100, an operating temperature range of 0 to 70 degrees Celsius, and an operating frequency of up to 50 KHz. The device is available in a variety of packages, including the ST-240-LFV, the CL-3, and the TO-92.
Some common applications for the KSP56TF BJT include switching, amplifiers, and motor control. In a switching application, the KSP56TF is used to control the flow of power to different components or devices. In an amplifier, it is used to amplify the input signal and provide amplified output. In a motor control application, it can be used to control the speed and direction of a motor.
The working principle of the KSP56TF is based on the alpha-beta form of Ebers Moll model. This model states that a BJT consists of two p-type materials and one n-type material and works based on a "majority charge" principle. In this model, the n-type material is referred to as the base, the p-type materials are referred to as the emitter and collector, and the majority charge concept is referred to as the doping process.
In the KSP56TF BJT, current flow occurs when a voltage is applied to the base, which causes the majority charges of the base to become electron-rich. This causes a "depletion layer" in the base, which reduces the width of the depletion layer and increases the current. When the collector voltage is lowered, the depletion layer increases again, decreasing the current and causing the device to turn off.
The current gain of the device is an important factor to consider when selecting a BJT. The current gain, or beta (β), is the ratio of the collector current to the base current and is an important parameter when designing circuits. The KSP56TF has a typical current gain of 100, but the actual gain can vary depending on the current and voltage applied to the device.
In summary, the KSP56TF is a NPN type BJT that is used in a wide range of applications, including switching, amplifiers, and motor control. Its small size and low cost make it ideal for use in these applications. The device works based on the alpha-beta form of Ebers Moll model and has a current gain of 100. By understanding the working principle of the KSP56TF, designers can ensure that the device is correctly implemented for their specific application.
The specific data is subject to PDF, and the above content is for reference
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