KSP56BU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 100mA, 1V
Power - Max:	625mW
Frequency - Transition:	50MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3

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KSP56BU is a single bipolar junction transistor (BJT) designed with an insulated gatesolide-state transistor (IGBT) structure for high-speed switch control. Employing a vertical silicon chip structure, it can achieve high voltage gain, a wide operating frequency range, and low gate current. The current blocking capability and operating frequency are significantly higher than other devices with similar buildup structures.The KSP56BU is characterized by its high voltage gain, low input capacitance, long-term stability, and low turn-on and turn-off times. The main features of the device include low current consumption, fast switching, high-frequency operation, and thermal stability. The KSP56BU, as a single bipolar device, is suitable for applications such as switching power supplies, motor drives, and switching amplifiers. It can also be used in applications with high-speed dynamic requirements such as LED lighting, switching for audio amplifiers, and dynamic instrumentation.The KSP56BU can be used to replace traditional MOSFETs due to its electrical and physical robustness, low input capacitance, and high switching speeds. It can also provide low-noise control for audio amplifiers. The working principle of the KSP56BU is based on the "bipolar effect" which can be described as the continuous growth of current when voltage is applied to the collector and base while maintaining the same current at the emitter. This enables the transistor to switch quickly between states and operate at a high voltage gain. The device is also capable of achieving low input capacitance and long-term stability. This is accomplished through the thermal management of the device, which ensures rapid surface recrystallization without stress. This allows the active region of the transistor to be better tuned, providing high performance and low-power operation. In addition, the device features a soft-switching capability, allowing it to reduce switching current losses and improve EMI performance. The KSP56BU is a useful device for applications that require high voltage gain and fast switching performance. It can replace MOSFETs in applications that require low current consumption and fast switching times. In addition, it can be used for applications with high-speed dynamic requirements such as LED lighting and switching for audio amplifiers.

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