KTC3198-BL A1G

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 2mA, 6V
Power - Max:	500mW
Frequency - Transition:	80MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92

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Introduction

The KTC3198-BL A1G is a type of transistor that is commonly referred to as a Bipolar Junction Transistor (BJT). BJTs are transistors comprised of three layers of semiconductor materials, often referred to as base, emitter and collector. They are a popular type of transistor due to their low costs and wide availability. Furthermore, BJTs operate using a direct current (DC) voltage source, meaning that they do not require an alternating current (AC) source, making them ideal for DC applications.

BJT - KTC3198-BL A1G Application Field

The KTC3198-BL A1G is a standard NPN type of BJT, meaning that the collector is tied to the emitter with a single P-type layer of semiconductor material, while the base is tied to the collector with a single N-type layer of semiconductor material. This unique design is what makes the KTC3198-BL A1G a particularly powerful BJT due to its ability to handle large currents and voltages. This makes it well suited for a wide array of applications including, but not limited to, amplifiers, power switching, audio and radio frequency (RF) circuits, as well as other linear and switched modes of operation.

BJT - KTC3198-BL A1G Working Principle

Due to its NPN design, the KTC3198-BL A1G operates using a current flowing from the collector to the emitter. This current is known as the collector current and is used to activate the transistor. When the collector current is sufficient (generally above 0.1 mA) it will cause the transistor to become saturated, allowing current to flow through the emitter and base. The amount of current flowing through the base and emitter is determined by the ratio of resistance between the emitter and the base. This allows the KTC3198-BL A1G to be used as a variable amplifier, enabling the level of amplification to be adjusted by simply altering this ratio.

Conclusion

The KTC3198-BL A1G is a powerful transistor that is able to handle large amounts of current and voltage due to its NPN type design. This makes it ideal for applications such as amplifiers, power switching, and audio/RF systems as well as other linear and switched modes of operation. Furthermore, its working principle is based around the amount of current flowing through the base and emitter, which determines how much amplification the transistor can provide. In conclusion, the KTC3198-BL A1G is an ideal transistor for a wide range of applications.

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