KTC3198-GR B1G

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 2mA, 6V
Power - Max:	500mW
Frequency - Transition:	80MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92

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KTC3198-GR B1G Application Field and Working Principle

Bipolar junction transistors (BJTs) are vital components that are widely used in electronics applications today. As a result of their versatility and high speed, BJTs can be used for a variety of purposes, from amplifying or switching electrical signals to controlling large-scale electrical currents. The KTC3198-GR B1G BJTis a general-purpose transistor commonly used in narrow signal amplification applications. This article will explain the field of application and working principle of the KTC3198-GR B1G BJT.The KTC3198-GR B1G BJT is a high-gain, low-frequency transistor designed for use in applications that require high signal-to-noise ratio, such as amplification of narrow-band signals. It is a surface mount device with a wide temperature operating range of -65°C to +150°C. The KTC3198-GR B1G BJT can also achieve low-voltage and low-power performance due to its low collector-emitter saturation voltage, high input impedance and low noise operation. Furthermore, it is a high-frequency transistor, capable of supporting up to 5MHz frequency signals. Due to its wide range of features, the KTC3198-GR B1G BJT is suitable for use in a variety of applications, such as signal amplifiers, mixers, detectors, radio transmitters, high frequency amplifiers and numerous other devices. It is also suitable for use in automotive, medical, telecom and other high-reliability applications.The KTC3198-GR B1G BJT has three terminals: collector, emitter and base. The collector-base region is a diode junction, while the emitter-base region is forward biased, forming the basis of the transistor action. When a signal is applied to the base (base-emitter junction), it controls the collector-emitter current flow, called the collector current Ic. This current is amplified in the process and produces the transistor\'s output in the form of a voltage across the collector emitter, VCE. The amplification factor hFE is a measure of this voltage level and is also known as the gain. The current gain of the transistor is determined by the ratio between electric current Ic and the base current IB.In summary, the KTC3198-GR B1G BJT is a general-purpose, surface mount transistor device with a wide temperature operating range, low collector-emitter saturation voltage, wide-band frequency performance and high input impedance. Its main applications are narrow signal amplification, signal amplifiers, mixers, detectors, radio transmitters and high frequency amplifiers. The device has three terminals, collector, base and emitter, and its main characteristic is to amplify the applied base current, resulting in the generation of the amplified output voltage VCE.

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