Allicdata Part #: | KTC3198-OB1G-ND |
Manufacturer Part#: |
KTC3198-O B1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | TRANSISTOR, NPN, 50V, 0.15A, 200 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 500mW... |
DataSheet: | KTC3198-O B1G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.03175 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 2mA, 6V |
Power - Max: | 500mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92 |
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KTC3198-O B1G transistors are a type of single bipolar junction transistors (BJTs). They are used in variety of applications and are a reliable choice for many applications.
The KTC3198-O B1G transistors are designed for use in numerous circuits, from digital and analogue circuits to discrete audio. These transistors are suitable for use in a wide variety of applications including those requiring reliable operation such as power supply design, power switching and control, RF amplification, and high-voltage switching. They can be used in either N-channel or P-channel configurations depending on their use.
The KTC3198-O B1G transistors have a wide range of power supply ratings, ranging from 3V to 300V. They have a very low on-resistance when used in P-channel configuration, making them an ideal choice for high current applications. The transistors are also capable of switching at high frequencies, up to 1GHz.
The KTC3198-O B1G transistors consist of two interconnected semiconductor layers. They use p-type and n-type semiconductor materials to create a so-called rectifier effect, allowing them to be used as a switch or amplifier in circuits. This rectifier effect also allows the transistor to act as a voltage regulator.
The KTC3198-O B1G transistors use the common base configuration, also referred to as Emitter-Follower, in which the emitter transistor is driven directly by the input voltage. The emitter current is then amplified by the transistor and passed to the collector. The collector current is then returned to the emitter terminal. This configuration creates a feedback loop, allowing the transistor to maintain a constant voltage in the output. This feature makes them ideal for a wide range of applications, such as voltage regulation, signal amplification, and inverter control.
In addition to the common base configuration, the KTC3198-O B1G transistors can also be used in a common-collector configuration, also referred to as a Darlington configuration. In this setup, the emitter transistor is driven by the base current and the collector transistor is driven by the emitter current. This allows for a greater amplification of the input voltage than can be achieved with the common-base configuration.
The KTC3198-O B1G transistors are also fast switching, meaning they have a fast turn-on and turn-off response time. They have a high insulation resistance, making them suitable for high voltage applications, and they can withstand high temperatures up to 175°C.
In summary, the KTC3198-O B1G transistors are a reliable choice for a variety of applications from power supply design, power switching, and control to RF amplification and high-voltage switching. They can be used in either N-channel or P-channel configurations for a wide range of voltages. They are also fast switching, have a high insulation resistance, and can withstand high temperatures, making them an ideal component for high power and high voltage applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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