Allicdata Part #: | 497-13349-ND |
Manufacturer Part#: |
LET20045C |
Price: | $ 75.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | RF MOSFET N CH 80V 12A M243 |
More Detail: | RF Mosfet LDMOS 28V 500mA 2GHz 13.3dB 54W M243 |
DataSheet: | LET20045C Datasheet/PDF |
Quantity: | 11 |
1 +: | $ 68.39280 |
10 +: | $ 64.11830 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2GHz |
Gain: | 13.3dB |
Voltage - Test: | 28V |
Current Rating: | 12A |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 54W |
Voltage - Rated: | 80V |
Package / Case: | M243 |
Supplier Device Package: | M243 |
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Low Noise Amplification technology (LETA) is a leading-edge high-frequency circuit technology and is widely used in various transmitters and receivers. As a core element of LETA, LET20045C is a high-frequency low-noise amplifier with high power ratio, high gain and high linearity. This article will present the introduction to LET20045C, as well as its application field and working principle.
The LET20045C is a high power gain low noise amplifier with a maximum power output of 10W and a maximum gain of 40 dB. It is composed of 12 high-frequency transistors and four harmonic multiplexers. It is available in two types: 4-stage and 8-stage. The 8-stage version is typically used in applications requiring a wider dynamic range, lower noise figure and higher power gain.
The LET20045C is mainly used in high-frequency antennas, base stations, data transceivers, and cellular base stations. It can be used in a variety of communication applications such as WCDMA, WiMAX, TD-SCDMA, CDMA2000 and GSM. It is also suitable for applications requiring high power gain, such as high-power radar receivers and satellite receivers.
Working principle: The LET20045C is a common-source amplifier using Field-effect Transistor (FET) technology. It incorporates a FET in the input stage and a differential amplifier to increase the gain. The current flowing through the FET is controlled by the gate-to-source voltage, while the source-to-drain voltage is fixed. The differential amplifier increases the gain by amplifying the difference between the two inputs, which further amplifies the signal. The LET20045C is capable of amplifying signals from 100 MHz to 4 GHz.
In summary, the LET20045C is a high power and high gain low noise amplifier with excellent performance. It is well suited for a variety of communication and signal processing applications that require high power gain. The LET20045C utilizes FET technology to provide low noise amplification and wide frequency response. With its excellent performance, the LET20045C is an ideal choice for radio frequency and wireless applications.
The specific data is subject to PDF, and the above content is for reference
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