LMG1205YFXR Integrated Circuits (ICs)

Logic Voltage - VIL, VIH:	--
Supplier Device Package:	12-DSBGA
Package / Case:	12-WFBGA, DSBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	7ns, 3.5ns
High Side Voltage - Max (Bootstrap):	100V
Input Type:	Non-Inverting
Current - Peak Output (Source, Sink):	1.2A, 5A
Series:	--
Voltage - Supply:	4.5 V ~ 5.5 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Half-Bridge
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PMIC - Gate Drivers are integral components in power management systems, offering isolated, isolated and/or isolated, isolated or isolated/ais functions to drive 2 or 3 MOSFETs or IGBTs in high frequency, wide temperature range and low current applications. The LMG1205YFXR is one such product. It provides a unique combination of features, efficiency and cost of ownership that makes it an ideal choice for a variety of power management solutions. Let’s take a look at the application field and working principle of this device. The LMG1205YFXR is a monolithic gate driver IC that is suitable for use in a variety of isolated, isolated/ais and isolated/ais/ insulated applications. Its internal design provides an isolated topology with reinforced isolation boundaries to protect the user’s equipment from inadvertent damage due to transient overvoltage events. It also offers the user protection from fault and temperature events. The IC is designed for driving two N-channel MOSFETs, two P-channel MOSFETs or a single 2-level IGBT, up to 10-A peak. Additionally, it features a protected gate drive for enhanced reliability and long MTBF. The combination of all these features make the LMG1205YFXR suitable for many applications such as Industrial, Automotive and energy, signal and timing controls, communications, RF and signal conditioning, power factor correction and so on. The LMG1205YFXR working principle is based on the principle of power conversion. The device is able to convert high voltages into low voltages, making it ideal for a variety of power management applications. The device employs a unique design, which includes a single package containing both the power circuitry and the control circuitry. This single-package approach reduces the board space required for the power device and thus reduces the overall system cost. The device utilizes an isolated gate driver to provide the isolated control signals to the MOSFETs or IGBTs. The device is able to switch off at the desired time and the output voltage is easily adjustable. In terms of performance, the device provides a wide range of performance options including a maximum switching frequency of up to 50MHz and a maximum peak current rating of 10 Amps. The device also features an overvoltage protection and an adjustable slew rate to ensure that the switching frequency and peak current remain within safe limits. This ensures that the system remains safe even at higher frequencies and current ratings. Moreover, the LMG1205YFXR includes a variety of integrated protective features such as overcurrent, undervoltage and overvoltage protections. These help to protect the device against faults and overconditions, making it ideal for applications requiring robustness and isolation. Additionally, the device also incorporates a single logic-level control interface and flexible logic level thresholds making it easy to program and control the device. As a result, the LMG1205YFXR from Maxim Integrated is an ideal choice for a variety of power management solutions. Its comprehensive features make it suitable for a wide range of applications including Industrial, Automotive and energy, signal and timing controls, communications, RF and signal conditioning, power factor correction and so on. Its power conversion capability ensures that the system remains safe at higher voltages and frequencies making it an ideal gate driver device for a variety of power management solutions.

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