Allicdata Part #: | LP1030DK1-G-ND |
Manufacturer Part#: |
LP1030DK1-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET 2P-CH 300V SOT23-5 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 300V Surface Mou... |
DataSheet: | LP1030DK1-G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 300V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 180 Ohm @ 20mA, 7V |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10.8pF @ 25V |
Power - Max: | -- |
Operating Temperature: | -25°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | SOT-23-5 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The LP1030DK1-G is an array of Field Effect Transistors (FETs). It is a multi-conductor, dual-gate device that allows for efficient control of linear and nonlinear power devices.
The LP1030DK1-G features two N-channel and two P-channel FETs, providing two independent paths of switchable control of power devices. It has adjustable gate and source resistors, and a temperature compensation diode to reduce the temperature effect on output power and reduce the power dissipation. It also has an adjustable delay time, allowing the user to control the speed of the switch.
The LP1030DK1-G is typically used for controlling high voltage applications, such as motor control, power supply, and other power sources. It can also be used for switching systems, such as those used in data acquisition and switching systems, in home automation and security systems, or in industrial control systems.
The working principle behind the LP1030DK1-G is based on the four transistors built into the array. When a voltage is applied to the gate of one of the transistors, it creates an inversion layer at the interface between the gate and the semiconductor. This inversion layer, called a depletion layer, blocks current flow between the gate and the source. By adjusting the gate voltage, the depletion layer can be made thicker or thinner, allowing the current to pass through or block it.
In a switching system, the LP1030DK1-G will control the power to the load by controlling the voltage applied to the gate of the transistor. By controlling the voltage, the switching system can effectively turn the power on and off to the load.
The LP1030DK1-G can be used in a number of applications, particularly in motor control or power sources. It is an ideal choice for those looking for a device that can control the flow of power without consuming a great deal of power itself. It offers adjustable gate and source resistors, adjustable delay time, and temperature compensation for increased efficiency. It also has a high voltage breakdown rating, making it a robust and reliable device for many applications.
The specific data is subject to PDF, and the above content is for reference
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