Allicdata Part #: | F10718-ND |
Manufacturer Part#: |
LSIC2SD120A08 |
Price: | $ 6.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Littelfuse Inc. |
Short Description: | DIODE SIC SCHOTTKY 1200V 8A |
More Detail: | Diode Silicon Carbide Schottky 1200V 24.5A (DC) Th... |
DataSheet: | LSIC2SD120A08 Datasheet/PDF |
Quantity: | 1019 |
1 +: | $ 5.78970 |
10 +: | $ 5.20947 |
25 +: | $ 4.74617 |
100 +: | $ 4.28324 |
250 +: | $ 3.93594 |
500 +: | $ 3.58864 |
1000 +: | $ 3.12559 |
Series: | Gen2 |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 24.5A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 8A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 100µA @ 1200V |
Capacitance @ Vr, F: | 454pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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A diode is a type of semiconductor device used to control the flow of current in an electronic circuit. The LSIC2SD120A08 is a single board rectifier used to protect circuits against overcurrent. It is a very simple device, consisting of doped silicon forming a heavily p-doped and lightly n-doped region when voltage is not applied to the junction. The LSIC2SD120A08 is commonly used in applications requiring protection from over-voltage, such as automotive circuits, power supplies and sensor circuits.
The working principle of the LSIC2SD120A08 is fairly straightforward. Whenever a voltage is applied to the junction, the p-doped region in the diode becomes more conductive than the n-doped region. This causes an increase in current flow through the device as electrons flow through the p-doped region faster than through the lightly n-doped region. The result is that current is restricted to a single direction and any reversals are prevented from occurring.
The LSIC2SD120A08 has several advantages over other types of diodes. It is much more reliable due to its ability to handle high current surges without damaging the device. It is also more efficient, dissipating less power when conducting current and thus reducing power loss. It features very low reverse recovery time, meaning that it can turn off quickly in the event of an overload. Additionally, the LSIC2SD120A08 has an extremely low low forward voltage drop, allowing it to dissipate less power during operation.
The main application field of the LSIC2SD120A08 include automotive electronics, power supply circuits, and other consumer electronic circuits. Its high current surges allow it to protect delicate components from damage and its low forward voltage drop allows it to save power in the application. Additionally, the LSIC2SD120A08 is used in sensor circuits as it can detect a power surge before any damage can be done and can be used to quickly shut down the circuit and prevent further damage.
The LSIC2SD120A08 is a simple, yet effective semiconductor device, designed to protect circuits from over-voltage and over-current. Its low forward voltage drop and low reverse recovery time allow it to save power and protect components from damage. The device is commonly used in automotive electronics, power supplies and sensor circuits and offers excellent performance and protection.
The specific data is subject to PDF, and the above content is for reference
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