LSIC1MO120E0120 Allicdata Electronics
Allicdata Part #:

F11004-ND

Manufacturer Part#:

LSIC1MO120E0120

Price: $ 14.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: SIC MOSFET 1200V 27A TO247-3
More Detail: N-Channel 1200V 27A (Tc) 139W (Tc) Through Hole TO...
DataSheet: LSIC1MO120E0120 datasheetLSIC1MO120E0120 Datasheet/PDF
Quantity: 496
1 +: $ 13.55130
10 +: $ 12.31650
25 +: $ 11.39260
100 +: $ 10.46910
250 +: $ 9.54527
Stock 496Can Ship Immediately
$ 14.9
Specifications
Vgs(th) (Max) @ Id: 4V @ 7mA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 139W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1125pF @ 800V
Vgs (Max): +22V, -6V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V
Series: --
Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The LSIC1MO120E0120 is a type of transistor, specifically a power MOSFET or a metal oxide semiconductor field effect transistor (MOSFET). MOSFETs are a type of field effect transistor that works by blocking or allowing the flow of electrons through a channel in their construction. These transistors are widely used in modern electronics technology due to their compact size, high power handling capacity, and ability to swiftly switch between "on" and "off" states.

LSIC1MO120E0120 is a discrete single N-channel enhancement mode MOSFET. With a package type of D²Pak, it can handle currents up to 120A and voltages up to 120V. It is suitable for medium applications such as low-side switch deployments in a wide range of applications.

Working Principle

The working principle of the LSIC1MO120E0120 is based on the principle of field effect transistors. A basic MOSFET consists of a source and a drain terminals and a control gate. When a small voltage is applied to the gate-source terminal, it creates a depletion region around the gate and modifies the width of the conducting channel between the source and the drain. This modifies the resistance between the two terminals, allowing for current flow.

The LSIC1MO120E0120 transistor is an N-channel MOSFET, meaning it has an N-type semiconductor material as its base. The resistance between the drain and source terminals is controlled by varying the voltage applied to the gate terminal. When a positive voltage is applied to the gate, the electrons in the channel are forced away from the gate and the resistance between the drain and the source terminals increases. When a negative voltage is applied to the gate, it pulls the electrons towards the gate and the resistance between the drain and source terminals decreases.

Application Field

The LSIC1MO120E0120 is designed to handle high-current applications. These include automotive and industrial motor speed control, DC-DC converters, general purpose power switches and solar power applications. In such applications, the device can be used to vary the speed of a motor, regulate the output voltage of a DC-DC converter or the power output of a solar panel.

In addition to this, the LSIC1MO120E0120 is also used in audio amplifiers, class-d amplifiers, buck converters and H-bridge inverters. High-current applications like welding and ferro-magnetic applications are also suitable for this device.

Conclusion

The LSIC1MO120E0120 is a powerful and reliable N-channel MOSFET transistor that can handle voltages up to 120V and currents up to 120A. It is suitable for medium-power applications such as low-side switch deployments in a wide range of applications. Due to its high power handling capacity and ability to switch between "on" and "off" states quickly, this device is widely used in automotive, industrial and solar power applications.

The specific data is subject to PDF, and the above content is for reference

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