LSIC1MO120E0080 Allicdata Electronics
Allicdata Part #:

F10335-ND

Manufacturer Part#:

LSIC1MO120E0080

Price: $ 19.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: MOSFET SIC 1200V 39A TO247-3
More Detail: N-Channel 1200V 39A (Tc) 179W (Tc) Through Hole TO...
DataSheet: LSIC1MO120E0080 datasheetLSIC1MO120E0080 Datasheet/PDF
Quantity: 72
1 +: $ 17.38800
10 +: $ 16.08390
25 +: $ 14.77980
100 +: $ 13.73650
Stock 72Can Ship Immediately
$ 19.12
Specifications
Vgs(th) (Max) @ Id: 4V @ 10mA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Power Dissipation (Max): 179W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 800V
Vgs (Max): +22V, -6V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 20V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The LSIC1MO120E0080 is a single N-channel MOSFET device. It utilises a vertical power MOSFET architecture with low gate and source resistance and high drain current in order to deliver high levels of performance and efficiency. The rated drain current of the LSIC1MO120E0080 device is 120A, which makes it suitable for a range of power management, power conversion and motor drive applications.

The LSIC1MO120E0080 is an ideal choice for applications requiring high current drive with low gate capacitance and on-resistance. It is often employed in applications including automotive DC-DC converters, DC-AC inverters, motor drives and white goods, where its rated drain current, gate capacitance and low-on resistance make it a suitable choice. It can also be used in consumer and communication applications, such as DC-DC converters and voltage regulators.

The working principle of the LSIC1MO120E0080 device is based on the transfer of electrical charge. The charge is transferred from the gate terminal to the source terminal, where it is then conducted to the drain terminal and reaches the load. In order for the charge transfer to take place, a gate-to-source voltage is needed which ‘activates’ the MOSFET and allows the charge to flow. The higher the Gate-to-Source voltage, the greater the amount of charge that will be transferred into the device.

By applying a Gate-to-Source voltage, the LSIC1MO120E0080 device can be turned ‘on’, allowing the charge to flow. Once the charge has been transferred, it can be turned ‘off’ again by reducing the Gate-to-Source voltage. This process is known as ‘controlling’ the MOSFET and is how the device is used in applications requiring power conversion and motor drive.

The device also offers some degree of protection to protect against electrical overstress. This is done by monitoring the drain-to-source voltage, activating a protection mechanism when the voltage exceeds the maximum limit. This prevents overstress of the device and helps to ensure its longevity.

In summary, the LSIC1MO120E0080 is a single N-Channel MOSFET device offering high performance levels for power conversion and motor drive applications. It utilises a vertical power MOSFET architecture with low gate and source resistance and high drain current for maximum efficiency levels. It also offers protection against electrical overstress to ensure its longevity. The device is activated by a Gate-to-Source voltage and operated by controlling the Gate-to-Source voltage.

The specific data is subject to PDF, and the above content is for reference

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