
Allicdata Part #: | F10335-ND |
Manufacturer Part#: |
LSIC1MO120E0080 |
Price: | $ 19.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Littelfuse Inc. |
Short Description: | MOSFET SIC 1200V 39A TO247-3 |
More Detail: | N-Channel 1200V 39A (Tc) 179W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 72 |
1 +: | $ 17.38800 |
10 +: | $ 16.08390 |
25 +: | $ 14.77980 |
100 +: | $ 13.73650 |
Vgs(th) (Max) @ Id: | 4V @ 10mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C |
Power Dissipation (Max): | 179W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1825pF @ 800V |
Vgs (Max): | +22V, -6V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 20A, 20V |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The LSIC1MO120E0080 is a single N-channel MOSFET device. It utilises a vertical power MOSFET architecture with low gate and source resistance and high drain current in order to deliver high levels of performance and efficiency. The rated drain current of the LSIC1MO120E0080 device is 120A, which makes it suitable for a range of power management, power conversion and motor drive applications.
The LSIC1MO120E0080 is an ideal choice for applications requiring high current drive with low gate capacitance and on-resistance. It is often employed in applications including automotive DC-DC converters, DC-AC inverters, motor drives and white goods, where its rated drain current, gate capacitance and low-on resistance make it a suitable choice. It can also be used in consumer and communication applications, such as DC-DC converters and voltage regulators.
The working principle of the LSIC1MO120E0080 device is based on the transfer of electrical charge. The charge is transferred from the gate terminal to the source terminal, where it is then conducted to the drain terminal and reaches the load. In order for the charge transfer to take place, a gate-to-source voltage is needed which ‘activates’ the MOSFET and allows the charge to flow. The higher the Gate-to-Source voltage, the greater the amount of charge that will be transferred into the device.
By applying a Gate-to-Source voltage, the LSIC1MO120E0080 device can be turned ‘on’, allowing the charge to flow. Once the charge has been transferred, it can be turned ‘off’ again by reducing the Gate-to-Source voltage. This process is known as ‘controlling’ the MOSFET and is how the device is used in applications requiring power conversion and motor drive.
The device also offers some degree of protection to protect against electrical overstress. This is done by monitoring the drain-to-source voltage, activating a protection mechanism when the voltage exceeds the maximum limit. This prevents overstress of the device and helps to ensure its longevity.
In summary, the LSIC1MO120E0080 is a single N-Channel MOSFET device offering high performance levels for power conversion and motor drive applications. It utilises a vertical power MOSFET architecture with low gate and source resistance and high drain current for maximum efficiency levels. It also offers protection against electrical overstress to ensure its longevity. The device is activated by a Gate-to-Source voltage and operated by controlling the Gate-to-Source voltage.
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