LSM140JE3/TR13

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The LSM140JE3/TR13 is a single, rectifier diode designed for a variety of applications. It is a semiconductor diode used to pass current in only one direction. It is used in various circuit designs and is often chosen for its high power dissipation capabilities. The LSM140JE3/TR13 is a relatively large, rectangular diode that utilizes a variety of materials for its construction. Its features and specs set it apart from many other diodes.

The LSM140JE3/TR13 is a fast-switching, ultra-fast-recovery rectifier diode with an extremely low forward voltage drop and low reverse leakage current. It is ideal for use when low voltage drop is desired, such as in switching power supplies, and also when a low reverse current and lower thermal dissipation are desired. It is commonly used in AC/DC rectifier circuits and is especially effective at high frequencies such as in high-speed switching applications.

The LSM140JE3/TR13 is constructed using a variety of materials, including a unique metal-oxide-semiconductor (MOS) structure. The MOS structure allows the diode to switch quickly and easily between the on and off states, which is important in switching power supplies. The package of the LSM140JE3/TR13 is a three-lead, flat-package structure that is designed for surface-mounting.

The maximum forward current rating for the LSM140JE3/TR13 is 14 amperes, with a reverse voltage rating of 1400 volts and an operating temperature range of -55°C to +125°C. The maximum thermal dissipation for the diode is 45 watts, with a storage temperature range of -55°C to +150°C.

The working principle of the LSM140JE3/TR13 is based on two principal components: the diode and the MOS structure. The diode consists of two elements: an anode and cathode. When a forward bias is applied to the diode, electrons flow from the anode to the cathode. This creates a current flow that passes in only one direction. The bias voltage necessary to maintain this current flow is known as the forward voltage drop.

The MOS structure is a dielectric layer that is between the diode and substrate. The MOS structure is designed to pass current in only one direction. When a reverse bias is applied to the diode, a blocking effect is created that prevents current from passing in the opposite direction. As a result, the LSM140JE3/TR13 is capable of providing fast switching speeds and a low reverse current.

The LSM140JE3/TR13 is capable of a variety of applications, including use in high-speed switching power supplies, rectifier circuits, and more. Its low forward voltage drop, low reverse leakage current, and high power dissipation make it an ideal choice for many applications. It is an easy-to-use, low-cost solution that can be used in a variety of circuit designs.

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