LTC1157CS8#PBF Allicdata Electronics
Allicdata Part #:

LTC1157CS8#PBF-ND

Manufacturer Part#:

LTC1157CS8#PBF

Price: $ 3.37
Product Category:

Integrated Circuits (ICs)

Manufacturer: Linear Technology/Analog Devices
Short Description: IC MOSFET DRIVER 3.3V DUAL 8SOIC
More Detail: High-Side or Low-Side Gate Driver IC Non-Inverting...
DataSheet: LTC1157CS8#PBF datasheetLTC1157CS8#PBF Datasheet/PDF
Quantity: 757
1 +: $ 3.06810
25 +: $ 2.03692
100 +: $ 1.70289
Stock 757Can Ship Immediately
$ 3.37
Specifications
Logic Voltage - VIL, VIH: --
Base Part Number: LTC1157
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Rise / Fall Time (Typ): --
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): --
Series: --
Voltage - Supply: 3.3 V ~ 5 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Part Status: Active
Packaging: Tube 
Description

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The LTC1157CS8#PBF is an integrated circuit designed for use as top and bottom side gate driver in power management applications. The power management integrated circuit (PMIC) gate driver is designed to drive high-power switching MOSFETs and IGBTs on the top and bottom FETs. It includes a high-speed, high-voltage MOSFET driver circuit, upper and lower gate driver circuits, and a digital gate voltage control interface.

The high-voltage, high-current MOSFET driver achieves high drive levels with fast rise and fall times. There is an adjustable short-circuit current limit that protects against over current damage. The upper and lower gate driver circuits are designed to drive the MOSFET and IGBTs on the top and bottom side FETs. The digital gate voltage control interface is used to adjust the internal gate voltage control, providing accurate voltage control without any external components.

The LTC1157CS8#PBF is designed for use in switching power supplies, switching regulators, DC-DC power converters, and solid-state relays. It is suitable for use in a wide range of applications and can be used in automotive as well as industrial applications.

The working principle of the LTC1157CS8#PBF is based on the principle of charge transfer. When the gate voltage of the MOSFET or IGBT is increased, the channel conducts current to the drain and the source. This increases the charge transfer rate between the gate and the channel, thus raising the voltage at the gate. This increase in voltage causes the gate voltage to rise, which in turn reduces the resistance of the device, allowing the current to flow.

The LTC1157CS8#PBF also features a range of features that make it suitable for use in a variety of applications. It features two channels, one for top side and one for bottom side, which allows it to drive two MOSFETs or IGBTs in parallel. It also features adjustable short circuit current limit and adjustable deadtime, allowing the user to adjust the operating conditions of the device.

The LTC1157CS8#PBF is a reliable and efficient integrated circuit for power management applications. It is designed for use in a wide range of applications and is suitable for use in automotive as well as industrial applications. It is an ideal choice for powering high-power switching MOSFETs and IGBTs.}

The specific data is subject to PDF, and the above content is for reference

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