LTC4442EMS8E-1#TRPBF Allicdata Electronics
Allicdata Part #:

LTC4442EMS8E-1#TRPBF-ND

Manufacturer Part#:

LTC4442EMS8E-1#TRPBF

Price: $ 1.11
Product Category:

Integrated Circuits (ICs)

Manufacturer: Linear Technology/Analog Devices
Short Description: IC DRVR NCH MOSFET 8-MSOP
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-MSOP-EP
DataSheet: LTC4442EMS8E-1#TRPBF datasheetLTC4442EMS8E-1#TRPBF Datasheet/PDF
Quantity: 1000
2500 +: $ 1.00890
Stock 1000Can Ship Immediately
$ 1.11
Specifications
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Base Part Number: LTC4442
Supplier Device Package: 8-MSOP-EP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 12ns, 8ns
High Side Voltage - Max (Bootstrap): 42V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 6 V ~ 9.5 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The LTC4442EMS8E-1#TRPBF belongs to the category of PMIC – Gate Drivers. It is widely used for its quick and reliable performance along with superior protection features. It is a single-channel high-speed gate driver, which helps in controlling the power transistors in an efficient manner. Its main application field is related to the PWM-controlled dc/dc converters, motor drivers, and loads.

The main features of this part are its highly efficient drive capability, low power consumption, excellent surge protection, and improved thermal radiation. It features a wide operating voltage range of 15V to 55V and a maximum current rating of 4A. It also features a built-in over-voltage protection that allows it to safely operate in harsh environments.

The LTC4442EMS8E-1#TRPBF is based on a pulse-width modulation (PWM) control scheme. It is designed to provide a fast and reliable drive for N-channel power transistors such as MOSFETs, IGBTs, and PNP bipolar junction transistors. It utilizes a low-side PWM control signal that is applied to the gate of the power transistor. The PWM signal is then amplified to produce a high-side drive that is used to control the load.

In order to achieve the desired level of performance, the LTC4442EMS8E-1#TRPBF provides a number of auxiliary functions. It includes an active pull-down circuit that can switch off the gate voltage when the voltage is below a predetermined level. It also includes a diode clamp on the gate drive which eliminates EMI problems. This part also features an optional adjustable dead-time feature, which helps in preventing shoot-through failures.

Furthermore, the LTC4442EMS8E-1#TRPBF is equipped with a unique protection feature. It includes a wide range of protection options such as overload current protection, thermal protection, and reverse voltage protection. These features help in protecting the power transistor in the event of any fault or malfunction.

In conclusion, the LTC4442EMS8E-1#TRPBF is a single-channel high-speed gate driver. Its main application field is related to the PWM-controlled dc/dc converters, motor drivers, and loads. It offers a high level of performance, as well as extensive protection features, which help in providing reliable operation in challenging conditions.

The specific data is subject to PDF, and the above content is for reference

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