LTC4442IMS8E-1#TRPBF Allicdata Electronics
Allicdata Part #:

LTC4442IMS8E-1#TRPBF-ND

Manufacturer Part#:

LTC4442IMS8E-1#TRPBF

Price: $ 1.23
Product Category:

Integrated Circuits (ICs)

Manufacturer: Linear Technology/Analog Devices
Short Description: IC DRVR NCH MOSFET 8-MSOP
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-MSOP-EP
DataSheet: LTC4442IMS8E-1#TRPBF datasheetLTC4442IMS8E-1#TRPBF Datasheet/PDF
Quantity: 1000
2500 +: $ 1.11813
Stock 1000Can Ship Immediately
$ 1.23
Specifications
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Base Part Number: LTC4442
Supplier Device Package: 8-MSOP-EP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 12ns, 8ns
High Side Voltage - Max (Bootstrap): 42V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 6 V ~ 9.5 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Power management integrated circuits (PMIC) provide the electrical interface between the source of the electrical energy and the point of the load. One example of PMIC is gate drivers, which control the current between the gate and the source of the energy. The LTC4442IMS8E-1#TRPBF is an example of a gate driver from Linear Technologies. This article will discuss the application fields and the working principle of the LTC4442IMS8E-1#TRPBF.

The application of the LTC4442IMS8E-1#TRPBF is mainly centered on battery-powered applications. It can be used to drive gates on MOSFETs and IGBTs. In addition, because of its very low supply current, it is ideal for the control of low-voltage supplies in applications such as medical low-power wireless sensors and battery-powered remote controllers. The chip is also operationally qualified over a wide temperature range, making it suitable for use in extreme environments.

The working principle of the LTC4442IMS8E-1#TRPBF is based on its unique pulse width modulation (PWM) control logic, which allows for a large amount of amplification for output voltage. The PWM control logic regulates the current when driving the gate of high power MOSFETs, allowing for higher efficiency and improved operation over the entire range of load conditions. By using the PWM control logic, the LTC4442IMS8E-1#TRPBF is able to regulate the current efficiently while keeping the output voltage steady.

The LTC4442IMS8E-1#TRPBF also includes a wide input voltage range to reduce power consumption. The chip is able to work with both single and dual battery systems, giving it the flexibility to meet the requirements of different applications. In addition, the chip also has an over-voltage/over-temperature protection circuit, as well as thermal shutdown circuitry. Furthermore, the chip also has an accurate current measurement function, allowing it to regulate the output current more efficiently.

In addition to its features, the LTC4442IMS8E-1#TRPBF is also designed for very low power consumption. It is able to achieve low energy consumption by utilizing a continuous low-impedance control loop, as well as by using efficient power output stages. The low power consumption also allows for greater system efficiency and longer battery life.

Overall, the LTC4442IMS8E-1#TRPBF is a gate driver suitable for battery-powered applications. It is able to regulate the current when driving the gate of high power MOSFETs, while also offering low power consumption, wide input voltage range, and over-voltage/over-temperature protection. Its unique PWM control logic also allows it to provide high performance while still remaining efficient.

The specific data is subject to PDF, and the above content is for reference

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