M27W101-80K6TR Allicdata Electronics
Allicdata Part #:

M27W101-80K6TR-ND

Manufacturer Part#:

M27W101-80K6TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EPROM 1M PARALLEL 32PLCC
More Detail: EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 80n...
DataSheet: M27W101-80K6TR datasheetM27W101-80K6TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: --
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.35x13.89)
Base Part Number: M27W101
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

M27W101-80K6TR is a type of memory, which has a wide range of applications and a working principle that differs quite significantly from other memories.

The M27W101-80K6TR memory is a Flash memory device, that is, a type of non-volatile memory, which is capable of storing data even when power is removed. One of the main applications of this type of memory is in the creation of embedded systems. This type of memory is widely used in a variety of different types of embedded devices, such as those found in medical equipment, industrial machinery, robotics, and communications systems.

Its unique design of non-volatile Flash memory allows for easy and fast data transfer. This feature makes it an ideal memory solution for embedded systems that require fast read and write speeds as well as frequent data transfers. In addition, its small form factor makes it a great choice for applications that have space constraints.

As for its working principle, the M27W101-80K6TR utilizes n-channel and p-channel Field Effect Transistors. When a voltage is applied across the transistor, a positive charge will flow from the n-channel to the source, which acts as a source of electricity. The voltage across the transistor will then be divided among the different components of the memory, with different components receiving different voltages, depending on their load. This is what allows for the device to store data.

In addition, the M27W101-80K6TR features a hardware level built-in error correction, providing a high level of data security. This makes it an ideal choice for mission-critical applications, where data integrity is of utmost importance.

Due to its wide range of applications, coupled with its efficient error-correction mechanism, low power consumption and small size, the M27W101-80K6TR makes an excellent choice for mission-critical applications. In a typical embedded system, the M27W101-80K6TR can be used to provide fast read and write speeds and provide electrical isolation between components.

All in all, the M27W101-80K6TR is a versatile memory product that can be used in many different types of applications. Its low power consumption, fast data transfer rates and error-correction feature make it an ideal choice for mission-critical applications. In addition, its small form factor makes it a great choice for applications that have space constraints.

The specific data is subject to PDF, and the above content is for reference

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