M27W512-100K6 Allicdata Electronics
Allicdata Part #:

M27W512-100K6-ND

Manufacturer Part#:

M27W512-100K6

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EPROM 512K PARALLEL 32PLCC
More Detail: EPROM - OTP Memory IC 512Kb (64K x 8) Parallel 10...
DataSheet: M27W512-100K6 datasheetM27W512-100K6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Write Cycle Time - Word, Page: --
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.35x13.89)
Base Part Number: M27W512
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

M27W512-100K6 is a non-volatile floating gate memory, commonly referred to as a flash memory. It is a type of to- le-programmable (OTP) memory. The M27W512-100K6 is a 512Kb device and it is used for data storage and code execution.

The M27W512-100K6 memory offers a wide range of applications, with the device targeting high-performance, low-cost and robust solutions.

M27W512-100K6 memory can be used in a variety of applications, such as automotive and industrial, embedded systems, medical and consumer applications. It is suitable for a range of operating temperature and voltage conditions, allowing it to be used in harsh environment applications.

The M27W512-100K6 memory offers fast erase/program cycles and can operate at temperatures ranging from -40 to +85°C (-40 to +185°F). In addition, it can be powered by 1.8V I/O, 3V VCR, 5V VCDR and 3V Flash. As such, it is flexible enough to be used in almost any application.

The M27W512-100K6 provides an extensive range of modes, including Fast Read and Fast Program, which enable the device to run at higher speeds. It is also available in an 8-pin package with a single contact pad, which helps reduce overall design costs.

In terms of its working principle, the M27W512-100K6 is used to store information on its floating gates. This is done through the use of Fowler-Nordheim tunneling, where electrons are passed through a thin oxide layer, which acts as a barrier. This process causes the electrons to become trapped in the floating gates, thus storing information.

The M27W512-100K6 is capable of storing and retrieving data from these floating gates using the Erase, Program and Read commands. These commands are sent to the device via an interface such as I2C or SPI.

The M27W512-100K6 also offers various security features, such as Password Lock, Software Data Protection, ECC options and a Master Lock. These features allow the device to be used in a wide range of secure applications.

In conclusion, the M27W512-100K6 is an ideal choice for a variety of applications, due to its wide operating temperature range, fast erase/program cycles, single contact pad package and various security features. It is a reliable and robust memory solution that offers plenty of benefits for designers.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "M27W" Included word is 22
Part Number Manufacturer Price Quantity Description
M27W402-100B6 STMicroelect... 0.0 $ 1000 IC EPROM 4K PARALLEL 40DI...
M27W402-100K6 STMicroelect... 0.0 $ 1000 IC EPROM 4K PARALLEL 44PL...
M27W801-100N6 STMicroelect... -- 1000 IC EPROM 8M PARALLEL 32TS...
M27W512-100N6 STMicroelect... 0.0 $ 1000 IC EPROM 512K PARALLEL 28...
M27W512-100K6 STMicroelect... 0.0 $ 1000 IC EPROM 512K PARALLEL 32...
M27W201-80B6 STMicroelect... 0.0 $ 1000 IC EPROM 2M PARALLEL 32DI...
M27W512-100K6TR STMicroelect... 0.0 $ 1000 IC EPROM 512K PARALLEL 32...
M27W202-100K6 STMicroelect... 0.0 $ 1000 IC EPROM 2M PARALLEL 44PL...
M27W401-80K6 STMicroelect... 0.0 $ 1000 IC EPROM 4M PARALLEL 32PL...
M27W256B-80F6 STMicroelect... -- 1000 IC EPROM 256K PARALLEL 28...
M27W401-80F6 STMicroelect... 0.0 $ 1000 IC EPROM 4K PARALLEL 32CD...
M27W101-80K6TR STMicroelect... 0.0 $ 1000 IC EPROM 1M PARALLEL 32PL...
M27W102-80K6 STMicroelect... 0.0 $ 1000 IC EPROM 1M PARALLEL 44PL...
M27W201-80F6 STMicroelect... 0.0 $ 1000 IC EPROM 2M PARALLEL 32CD...
M27W401-80B6 STMicroelect... 0.0 $ 1000 IC EPROM 4K PARALLEL 32DI...
M27W401-80N6 STMicroelect... -- 1000 IC EPROM 4K PARALLEL 32TS...
M27W101-80N6TR STMicroelect... -- 1000 IC EPROM 1M PARALLEL 32TS...
M27W101-80N6 STMicroelect... 0.0 $ 1000 IC EPROM 1M PARALLEL 32TS...
M27W201-80K6 STMicroelect... -- 1000 IC EPROM 2M PARALLEL 32PL...
M27W101-80K6 STMicroelect... 0.0 $ 1000 IC EPROM 1M PARALLEL 32PL...
M27W801-100K6 STMicroelect... 0.0 $ 1000 IC EPROM 8M PARALLEL 44PL...
M27W201-80N6 STMicroelect... 0.0 $ 1000 IC EPROM 2M PARALLEL 32TS...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics