
Allicdata Part #: | M27W512-100K6-ND |
Manufacturer Part#: |
M27W512-100K6 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC EPROM 512K PARALLEL 32PLCC |
More Detail: | EPROM - OTP Memory IC 512Kb (64K x 8) Parallel 10... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - OTP |
Memory Size: | 512Kb (64K x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC (11.35x13.89) |
Base Part Number: | M27W512 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
M27W512-100K6 is a non-volatile floating gate memory, commonly referred to as a flash memory. It is a type of to- le-programmable (OTP) memory. The M27W512-100K6 is a 512Kb device and it is used for data storage and code execution.
The M27W512-100K6 memory offers a wide range of applications, with the device targeting high-performance, low-cost and robust solutions.
M27W512-100K6 memory can be used in a variety of applications, such as automotive and industrial, embedded systems, medical and consumer applications. It is suitable for a range of operating temperature and voltage conditions, allowing it to be used in harsh environment applications.
The M27W512-100K6 memory offers fast erase/program cycles and can operate at temperatures ranging from -40 to +85°C (-40 to +185°F). In addition, it can be powered by 1.8V I/O, 3V VCR, 5V VCDR and 3V Flash. As such, it is flexible enough to be used in almost any application.
The M27W512-100K6 provides an extensive range of modes, including Fast Read and Fast Program, which enable the device to run at higher speeds. It is also available in an 8-pin package with a single contact pad, which helps reduce overall design costs.
In terms of its working principle, the M27W512-100K6 is used to store information on its floating gates. This is done through the use of Fowler-Nordheim tunneling, where electrons are passed through a thin oxide layer, which acts as a barrier. This process causes the electrons to become trapped in the floating gates, thus storing information.
The M27W512-100K6 is capable of storing and retrieving data from these floating gates using the Erase, Program and Read commands. These commands are sent to the device via an interface such as I2C or SPI.
The M27W512-100K6 also offers various security features, such as Password Lock, Software Data Protection, ECC options and a Master Lock. These features allow the device to be used in a wide range of secure applications.
In conclusion, the M27W512-100K6 is an ideal choice for a variety of applications, due to its wide operating temperature range, fast erase/program cycles, single contact pad package and various security features. It is a reliable and robust memory solution that offers plenty of benefits for designers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
M27W402-100B6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 4K PARALLEL 40DI... |
M27W402-100K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 4K PARALLEL 44PL... |
M27W801-100N6 | STMicroelect... | -- | 1000 | IC EPROM 8M PARALLEL 32TS... |
M27W512-100N6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 512K PARALLEL 28... |
M27W512-100K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 512K PARALLEL 32... |
M27W201-80B6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 2M PARALLEL 32DI... |
M27W512-100K6TR | STMicroelect... | 0.0 $ | 1000 | IC EPROM 512K PARALLEL 32... |
M27W202-100K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 2M PARALLEL 44PL... |
M27W401-80K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 4M PARALLEL 32PL... |
M27W256B-80F6 | STMicroelect... | -- | 1000 | IC EPROM 256K PARALLEL 28... |
M27W401-80F6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 4K PARALLEL 32CD... |
M27W101-80K6TR | STMicroelect... | 0.0 $ | 1000 | IC EPROM 1M PARALLEL 32PL... |
M27W102-80K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 1M PARALLEL 44PL... |
M27W201-80F6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 2M PARALLEL 32CD... |
M27W401-80B6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 4K PARALLEL 32DI... |
M27W401-80N6 | STMicroelect... | -- | 1000 | IC EPROM 4K PARALLEL 32TS... |
M27W101-80N6TR | STMicroelect... | -- | 1000 | IC EPROM 1M PARALLEL 32TS... |
M27W101-80N6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 1M PARALLEL 32TS... |
M27W201-80K6 | STMicroelect... | -- | 1000 | IC EPROM 2M PARALLEL 32PL... |
M27W101-80K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 1M PARALLEL 32PL... |
M27W801-100K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 8M PARALLEL 44PL... |
M27W201-80N6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 2M PARALLEL 32TS... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

LPDDR3 6G DIE 192MX32Memory IC

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
