M27W101-80N6TR Allicdata Electronics
Allicdata Part #:

M27W101-80N6TR-ND

Manufacturer Part#:

M27W101-80N6TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EPROM 1M PARALLEL 32TSOP
More Detail: EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 80n...
DataSheet: M27W101-80N6TR datasheetM27W101-80N6TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: --
Access Time: 80ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: M27W101
Description

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M27W101-80N6TR is a type of nonvolatile memory device, more specifically a 64Kbit Serial SPI Flash Memory. It is a commonly used memory device in many applications, from industrial applications and factory automation, to portable devices and automotive systems.

This memory device is manufactured by STMicroelectronics, for its use in a wide variety of applications such as remote access control, or secure storage of critical data. It is available in two standard voltage grades, 1.8 V and 2.95 V, and also in two extended voltage grades, 1.2 V and 3.3 V. In terms of operating temperature, M27W101-80N6TR is available in three options, -40°C to 85°C, -40°C to 105°C, and -40°C to 125°C. It is packed in an 8-pin UDFN package, making it an ideal choice for applications that require a small size and low power consumption.

M27W101-80N6TR offers a wide array of features, all of which make it an ideal choice for both industrial and consumer applications. It has a high speed serial interface which allows for fast read/write operations, a low power consumption mode, electrostatic discharge (ESD) protection, and an instruction set specifically designed for small memory configurations.

The main working principle of the M27W101-80N6TR is based on the use of an internal transistor array. The array is made up of a number of addressable transistors that are used to store bits of data, allowing for near-instantaneous access and manipulation of the stored data. In order to access the stored data, a number of control signals are used, such as write and read operations, erase, and sector protection. Additionally, the control lines for write and read operations need to be synchronized to ensure a consistent clock frequency.

M27W101-80N6TR is capable of offering unrivaled speed and performance, while at the same time consuming very little power. It is the perfect choice for a wide array of applications that require a high data transfer rate and low power consumption. It is ideal for use in portable and automotive applications, as well as for industrial applications such as factory automation and remote access control. Additionally, its advanced security and data protection features make it an ideal choice for critical applications, where the safety of stored data is paramount.

The specific data is subject to PDF, and the above content is for reference

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