M27W801-100N6 Allicdata Electronics
Allicdata Part #:

M27W801-100N6-ND

Manufacturer Part#:

M27W801-100N6

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EPROM 8M PARALLEL 32TSOP
More Detail: EPROM - OTP Memory IC 8Mb (1M x 8) Parallel 100ns...
DataSheet: M27W801-100N6 datasheetM27W801-100N6 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: --
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: M27W801
Description

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Memory is the fundamental component in a computing system, and with the rapid development of technology, memory is able to store much more data than before. The M27W801-100N6 is a particular type of memory which has various advantages over other memory types. This article will explain the application field and working principles of the M27W801-100N6.

The M27W801-100N6 belongs to the category of NOR Flash memories, which are characterized by being non-volatile and low-power, compared to NOR and NAND Flash memory types. The main application field of NOR Flash memories is the storage of system code and data, as well as loading programmable applications for hardware-oriented products. The M27W801-100N6 is suitable for applications such as automotive and industrial applications as its endurance and data retention capabilities are higher than other NOR Flash memories.

The M27W801-100N6 is a 3-volt memory device which has 8Mbit density, organized into 1M x 8. This is one of the advantages of this memory type over other NOR Flash memories, as it allows data to be stored more efficiently. The following working principle explains the ways in which data is accessed and written to the M27W801-100N6 memory:

• Single bit Programming: This is the most basic type of programming which happens between one address and one bit of data, allowing for greater flexibility over standard programming algorithms. A write cycle is completed in ten milliseconds or less, allowing for faster access to the memory.

• Quad Programming: This is a type of programming where simultaneous data is written to four different addresses in a single cycle, leading to a faster programming speed. This type of programming also helps conserve power, as the same write cycle can be used for four different addresses.

• Sector Programming: This type of programming combines single bit programming with quad programming to write data to a sector. All four addresses from the single bit and quad programming points are combined to write data to a sector of the memory in a single cycle. This is one of the fastest and most efficient programming algorithms for the M27W801-100N6.

• Block Programming: This type of programming combines single bit and sector programming to write data to multiple blocks of the memory. This is a more useful type of programming as large amounts of data can be written to multiple blocks of the memory in a single write cycle, which can lead to an improved data processing speed.

In conclusion, the M27W801-100N6 memory offers advantages over other NOR Flash memories due to its higher endurance and data retention capabilities. Its application field ranges from automotive to industrial applications due to its high speed programming capabilities, as well as its ability to efficiently store data in batches in a single write cycle. The M27W801-100N6’s working principles involve single bit, quad, sector and block programming, all of which lead to a faster programming speed and improved data storage.

The specific data is subject to PDF, and the above content is for reference

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