
Allicdata Part #: | M27W801-100N6-ND |
Manufacturer Part#: |
M27W801-100N6 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC EPROM 8M PARALLEL 32TSOP |
More Detail: | EPROM - OTP Memory IC 8Mb (1M x 8) Parallel 100ns... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - OTP |
Memory Size: | 8Mb (1M x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 32-TSOP |
Base Part Number: | M27W801 |
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Memory is the fundamental component in a computing system, and with the rapid development of technology, memory is able to store much more data than before. The M27W801-100N6 is a particular type of memory which has various advantages over other memory types. This article will explain the application field and working principles of the M27W801-100N6.
The M27W801-100N6 belongs to the category of NOR Flash memories, which are characterized by being non-volatile and low-power, compared to NOR and NAND Flash memory types. The main application field of NOR Flash memories is the storage of system code and data, as well as loading programmable applications for hardware-oriented products. The M27W801-100N6 is suitable for applications such as automotive and industrial applications as its endurance and data retention capabilities are higher than other NOR Flash memories.
The M27W801-100N6 is a 3-volt memory device which has 8Mbit density, organized into 1M x 8. This is one of the advantages of this memory type over other NOR Flash memories, as it allows data to be stored more efficiently. The following working principle explains the ways in which data is accessed and written to the M27W801-100N6 memory:
• Single bit Programming: This is the most basic type of programming which happens between one address and one bit of data, allowing for greater flexibility over standard programming algorithms. A write cycle is completed in ten milliseconds or less, allowing for faster access to the memory.
• Quad Programming: This is a type of programming where simultaneous data is written to four different addresses in a single cycle, leading to a faster programming speed. This type of programming also helps conserve power, as the same write cycle can be used for four different addresses.
• Sector Programming: This type of programming combines single bit programming with quad programming to write data to a sector. All four addresses from the single bit and quad programming points are combined to write data to a sector of the memory in a single cycle. This is one of the fastest and most efficient programming algorithms for the M27W801-100N6.
• Block Programming: This type of programming combines single bit and sector programming to write data to multiple blocks of the memory. This is a more useful type of programming as large amounts of data can be written to multiple blocks of the memory in a single write cycle, which can lead to an improved data processing speed.
In conclusion, the M27W801-100N6 memory offers advantages over other NOR Flash memories due to its higher endurance and data retention capabilities. Its application field ranges from automotive to industrial applications due to its high speed programming capabilities, as well as its ability to efficiently store data in batches in a single write cycle. The M27W801-100N6’s working principles involve single bit, quad, sector and block programming, all of which lead to a faster programming speed and improved data storage.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
M27W402-100B6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 4K PARALLEL 40DI... |
M27W402-100K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 4K PARALLEL 44PL... |
M27W801-100N6 | STMicroelect... | -- | 1000 | IC EPROM 8M PARALLEL 32TS... |
M27W512-100N6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 512K PARALLEL 28... |
M27W512-100K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 512K PARALLEL 32... |
M27W201-80B6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 2M PARALLEL 32DI... |
M27W512-100K6TR | STMicroelect... | 0.0 $ | 1000 | IC EPROM 512K PARALLEL 32... |
M27W202-100K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 2M PARALLEL 44PL... |
M27W401-80K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 4M PARALLEL 32PL... |
M27W256B-80F6 | STMicroelect... | -- | 1000 | IC EPROM 256K PARALLEL 28... |
M27W401-80F6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 4K PARALLEL 32CD... |
M27W101-80K6TR | STMicroelect... | 0.0 $ | 1000 | IC EPROM 1M PARALLEL 32PL... |
M27W102-80K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 1M PARALLEL 44PL... |
M27W201-80F6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 2M PARALLEL 32CD... |
M27W401-80B6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 4K PARALLEL 32DI... |
M27W401-80N6 | STMicroelect... | -- | 1000 | IC EPROM 4K PARALLEL 32TS... |
M27W101-80N6TR | STMicroelect... | -- | 1000 | IC EPROM 1M PARALLEL 32TS... |
M27W101-80N6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 1M PARALLEL 32TS... |
M27W201-80K6 | STMicroelect... | -- | 1000 | IC EPROM 2M PARALLEL 32PL... |
M27W101-80K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 1M PARALLEL 32PL... |
M27W801-100K6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 8M PARALLEL 44PL... |
M27W201-80N6 | STMicroelect... | 0.0 $ | 1000 | IC EPROM 2M PARALLEL 32TS... |
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