| Allicdata Part #: | M29DW128F70NF6E-ND |
| Manufacturer Part#: |
M29DW128F70NF6E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 128M PARALLEL 56TSOP |
| More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Par... |
| DataSheet: | M29DW128F70NF6E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 128Mb (16M x 8, 8M x 16) |
| Write Cycle Time - Word, Page: | 70ns |
| Access Time: | 70ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package: | 56-TSOP (14x20) |
| Base Part Number: | M29DW128 |
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M29DW128F70NF6E is a type of memory that is used in many complex electronic systems. It is a NOR Flash memory device, and is capable of storing large amounts of data in a single chip. Memory devices are commonly used in a wide variety of applications, from communications and networking to embedded systems and intelligence. The purpose of the memory device is to store data internally, and to provide access to the data for processing or retrieval.
The M29DW128F70NF6E device is a NOR Flash device, meaning that it is built with non-volatile memory cells. This technology enables the device to store data that does not have to be constantly updated and refreshed. This type of memory is commonly used in applications that require long term data storage and access. The device has a low voltage programming (LVP) feature which allows data to be programmed and erased in a single programming cycle.
The M29DW128F70NF6E is a popular choice for use in automotive applications, home electronic products, industrial systems, medical equipment, and consumer electronics. The device is capable of storing 128 Mb, or 128 megabytes of data per chip. The device also has an extended temperature range of -40°C to +85°C, making it suitable for use in extreme conditions.
The working principle of the M29DW128F70NF6E device is based on a three-level cell organization. This architecture is made up of 32,768 groups of four bits, or 128Mb. Each cell is connected to an array of transistors and capacitors, which are used to represent the two states of 0 and 1. When data is written or read, the current level stored in the memory cell switches between high and low. This change is detected by the array of transistors, and the data is then read or written.
In order to keep the memory device reliable, it must be constantly cooled. This is accomplished by using an external cooling system or using an integrated Heat-Sink. The M29DW128F70NF6E device has an output current capability of 20mA, which helps to reduce power consumption and also increases the device’s performance. This device is also suitable for use in applications that require high reliability, such as aerospace and automotive applications.
The M29DW128F70NF6E is an excellent choice for memory applications that require large capacity and data security. The device has a low power consumption, an extended temperature range, and an improved architecture that is designed for high reliability. This makes the device suitable for a wide range of applications, and is a popular choice among engineers due to its versatility and price.
The specific data is subject to PDF, and the above content is for reference
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M29DW128F70NF6E Datasheet/PDF