M29DW323DB70N6E Allicdata Electronics
Allicdata Part #:

M29DW323DB70N6E-ND

Manufacturer Part#:

M29DW323DB70N6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: M29DW323DB70N6E datasheetM29DW323DB70N6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: M29DW323
Description

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The M29DW323DB70N6E is a type of memory, specifically a 3V insystem programmable dual bootsector flash memory with a minimum sector erase time of 30 ms. It is made by STMicroelectronics, a global semiconductor device leader, and is designed for use in automotive, industrial, and consumer applications.

The M29DW323DB70N6E is a non-volatile memory device that uses a single 3V power supply, with a maximum operating voltage of 3.6V, and a low dropout voltage regulator integrated into the device. It requires no external programming or erase voltages or signals to write or erase data.

The M29DW323DB70N6E is a dual boot sector memory, that is, it separates the boot sector from the rest of the memory. This means that the boot sector is protected from possible damage due to accidental writes, and allows for quicker boot up times for the device. It has a random access time of 85 ns and a program/erase time of 30 ms.

The memory can store up to 32 megabits of data and can also be used in applications requiring higher speeds, as well as low power consumption. The device also features safety features, such as built-in ESD protection, over-voltage sensing, and thermal protection, making it suitable for automotive and industrial applications.

When it comes to working principles, the M29DW323DB70N6E is based on a combination of numerous techniques, such as tunnel oxide charge trapping, Fowler-Nordheim field-emission, and hot electron injection. These principles allow for accurate programming, erasing and low rates of data corruption, even when the power is removed.

The M29DW323DB70N6E has a wide range of applications. In the automotive sector, it is used to store software codes for vehicle functions, such as powertrain control, emission systems, anti-theft systems and navigation systems. In the industrial sector, it can be used to store program codes, system parameters and data logs. In the consumer sector, it can be used to store code and data for gaming, home automation and other applications.

The M29DW323DB70N6E can also be used in other applications, such as in medical and military, where its small size, low power consumption and fast data transfer speeds can be beneficial. Its reliability and robustness make it a common choice for numerous memory-intensive applications.

Given its many advantages, the M29DW323DB70N6E can be used in a wide range of applications and helps provide reliable memory solutions for a variety of industries. Its combination of low cost, power consumption, ruggedness and fast data transfer speeds make it a great choice for those in the market for a reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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