M29DW323DB70N6 Allicdata Electronics
Allicdata Part #:

497-1699-ND

Manufacturer Part#:

M29DW323DB70N6

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: M29DW323DB70N6 datasheetM29DW323DB70N6 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: M29DW323
Description

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M29DW323DB70N6 is a type of memory chip created by ST Microelectronics. It is designed for high-performance embedded applications, and is capable of storing up to 8 mega bytes of data. It offers flexibility, fast access times, and data security.

The M29DW323DB70N6 is most commonly used in portable electronics such as smart phones and tablets. It is also used in automotive infotainment systems, point-of-sale (POS) systems, industrial monitoring systems, and medical equipment. This chip offers excellent performance in these applications due to its wide bus width, fast access times, and low power consumption.

The M29DW323DB70N6 consists of 8 banks of 128KB, which are connected to a multiplexed address/data interface. The chip also has a built-in ECC (error correcting code) that can detect and correct any errors that may occur due to external noise or from hardware flaws.

The M29DW323DB70N6 is organized as 8 equal segments, or banks, of 128KB each. Each of these banks is mapped to its own address range. The chip supports up to 8 instructions, a read, write, erase and protect function, a data output pin, and an H/W activate/deactivate command. It also supports watermark protection and partial page programming. Additionally, the chip supports three extra input pins that can be used to provide enhanced security.

The M29DW323DB70N6 has a fast write cycle time of 6 microseconds, and a fast read cycle time of 1 microsecond. It is also capable of running up to 6 wait states. These speeds and capabilities make the memory device suitable for applications where fast access times and data transfer rates are essential.

In terms of power consumption, the M29DW323DB70N6 is designed for low-power applications. It runs on a single 1.8V supply and consumes only 16mA in active mode. This makes it suitable for battery-powered applications, and helps reduce system costs.

The M29DW323DB70N6 is designed for use in a wide variety of embedded applications. Its fast access times, low power consumption, and wide bus width make it a good choice for applications that need high performance, such as smart phones and tablets.

The specific data is subject to PDF, and the above content is for reference

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