M29DW256G70NF6E Allicdata Electronics
Allicdata Part #:

M29DW256G70NF6E-ND

Manufacturer Part#:

M29DW256G70NF6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 7...
DataSheet: M29DW256G70NF6E datasheetM29DW256G70NF6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP
Base Part Number: M29DW256
Description

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The M29DW256G70NF6E is a memory device, used in a variety of industries, ranging from consumer electronics and automotive applications to medical and industrial equipment. It is a CMOS (Complementary Metal Oxide Semiconductor) type Flash Memory, typically used in non-volatile storage applications. It is among the newest series of CMOS Flash Memory devices available in the market today.

The M29DW256G70NF6E is available in a standard 8-pin Wafer Level Chip Scale Package (WLCSP), offering flexibility in the way it is used. It offers up to 256 Megabits (Mb) of storage capacity; meaning it can store up to 32 Megabytes (MB) of data. It offers dynamic memory operations, including read, write, erase, and program; providing the necessary control logic and functions for data management. The device also supports fast erase, allowing for faster write and erase operations.

The M29DW256G70NF6E is considered a low-voltage Flash Memory, requiring as low as 1.7V operating voltage. This makes the device ideal for portable applications, as less power is required for proper operation. The device also supports a 100-MHz system bus, allowing faster access to the stored data. This makes the device ideal for speed-critical applications, such as the automotive industry or home automation.

The M29DW256G70NF6E offers several additional features, such as: address masking (which simplifies system design), boot error checking (for debugging), page boundary protection (for secure data storage), temperature detection (which offers operator control), and byte mode (which increases memory access speed). The device also supports multiple blocks and sectors, enabling mission critical applications, such as industrial automation, to increase reliability and dependability.

The M29DW256G70NF6E is based on an array of non-volatile memory cells, and is typically used in order to store data permanently. This type of memory is nonvolatile and retains its contents when power is turned off or lost, making it ideal for data storage applications. In order to write to or read from the memory cells, the device supports a number of commands, depending on the type of operation. The device also provides for error checking and correction, allowing for reliable data storage and retrieval.

With its various features and advantages, the M29DW256G70NF6E can be used in a variety of applications, ranging from consumer electronics and automotive applications to medical equipment. Its low-voltage operation and fast erase capabilities make it ideal for embedded systems and mission-critical, speed-sensitive applications, while its nonvolatile data storage and error-checking capabilities make it suitable for more demanding and sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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