M29F080D70M6

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	8Mb (1M x 8)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-SOIC (0.525", 13.34mm Width)
Supplier Device Package:	44-SO
Base Part Number:	M29F080D

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M29F080D70M6 is a high-capacity 8M × 8 bits CMOS Flash Memory. It is an electrically erasable programmable read-only memory (EEPROM) with high speed, low power consumption and high reliability and endurance to replace non-volatile memories. It is suitable for applications such as data storage, system configuration and code storage.M29F080D70M6 is divided into two banks of 4 Mbits each, which can operate independently, and each bank is composed of 1 Mbits × 8 bits physically orderly organization. The 1Mbyte different sector group is assimilated with sequential organization and can be erased and programmed independently. The memory features a small packages, fast read time (55ns typical with DQ0, DQ7 active), low Vcc operational current, low power consumption and reliable endurable data storage.M29F080D70M6 is organized in 8 soft sectors of 512Kbytes each which can be programmed or erased independently, or in 1Kbyte blocks, or in 4Kbyte blocks, or full 8 Mbyte block. When writing or programming, the whole sector or block can be 3.2V with high and low byte access or 5V byte programed. During erasing, the voltage can be low or high byte erased orGlobal Chip Erase.The M29F080D70M6 requires fairly low Vcc power (2.7~3.6V) and supports standby mode, resulting in a low overall power consumption. It is suitable for portable equipment and battery-backed applications due to its superior low power consumption and tremendous flexibility to store volatile or non-volatile variables.M29F080D70M6 has advanced ECC algorithms to ensure data accuracy. The device has 8Kbits of ONFI ECC built-in, ensuring reliable data storage while preventing data corruption. In addition, the device supports advanced Error Correction Code (ECC) and Error Detection Code (EDC) algorithms, adding an additional layer of protection against data storage errors.The working principle is based on the "floating-gate" memory cell concept. In M29F080D70M6, the transistor contains two gates, one is the control gate (CG) and the other is the floating gate (FG). The floating gate is separated from the control gate by an insulating layer. A high voltage pulse is applied to the control gate to inject electrons onto the floating gate, which is usually referred to as programming. To erase the memory, the electrons from the floating gate must be removed by dissolving out, which can be accomplished by applying a higher reverse voltage pulse.In conclusion, M29F080D70M6 is an embedded non-volatile memory with high capacity and excellent performance to support various applications. It combines low voltage operation and power consumption, fast read time and reliable data storage with advanced ECC algorithms. This makes it ideal for applications such as data storage, system configuration and code storage.

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