M29F010B70K6E Allicdata Electronics
Allicdata Part #:

M29F010B70K6E-ND

Manufacturer Part#:

M29F010B70K6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1M PARALLEL 32PLCC
More Detail: FLASH - NOR Memory IC 1Mb (128K x 8) Parallel 70n...
DataSheet: M29F010B70K6E datasheetM29F010B70K6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.35x13.89)
Base Part Number: M29F010
Description

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M29F010B70K6E, also known as “Flash Memory”, is a type of non-volatile storage that stores permanent data even without electric power. The Flash Memory is widely used in application fields such as digital cameras, PC motherboards, and digital video camcorders. It is low in power, lightweight and cost-effective.

Flash Memory devices, such as the M29F010B70K6E, have a wide range of applications in everyday life. They are used in digital devices such as MP3 players and PDAs, as well as in medical devices where reliable data storage is required. In addition, Flash Memory is used in global positioning systems (GPS), automotive applications, smart cards, and digital satellite systems.

The M29F010B70K6E is a highly advanced device that is equipped with high-density memory and advanced programming features. This Flash Memory device is composed of a five-byte programmable logic device and two chip select pins. It is also equipped with a 16 Mbit serial flash memory and two write-protect pins. Its features include a fast read/write speed and low power standby that enable rapid and cost-effective upgrades.

The working principle of the Flash Memory is based on transistors that can store electrical charges in tiny cells inside its memory chip. The memory chip contains billions of cells arranged in an array. These tiny cells are connected to read/write control lines and data lines, which allow data and instructions to be written into and read from the chip.

The memory cells, also referred to as memory bits, can store data in the form of a binary number. This number is divided into two groups, with each group representing a binary digit. Each memory bit is assigned two unique numbers and they can be programmed and erased in batches. Data is written into the chip using a programming voltage, which causes a flow of electrons to the designated location on the chip. The electrons then cause the memory cell to change its charge, thus storing the data.

When data is read from a memory chip, it is necessary for the chip to be in the “read mode”. This means that the chip is receiving a designated voltage from an external source. This voltage is then used to cause a current that flows to the requested memory location, which then causes a physical change in the memory cell. This physical change represents the binary number that is stored in a particular memory bit.

The Flash Memory is a reliable and cost-effective data storage technology. The M29F010B70K6E is equipped with advanced features and benefits, making it suitable for a wide variety of applications. Its features make it ideal for the needs of various industries, such as automotive, communication, medical, and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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