M29F800DB70N1 Allicdata Electronics
Allicdata Part #:

M29F800DB70N1-ND

Manufacturer Part#:

M29F800DB70N1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 8M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para...
DataSheet: M29F800DB70N1 datasheetM29F800DB70N1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: M29F800
Description

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Memory technology refers to the technology of storing data and information, which is an essential component of modern computing and communication systems. As a type of memory, M29F800DB70N1 has been widely used in embedded systems, especially medical, audio and automotive applications. This article will discuss the application field and working principle of M29F800DB70N1, focusing on its features, operation and applications.

M29F800DB70N1 is an 8 megabit Flash memory device for embedded systems. It is compatible with the industry standard SP48 transport interface and offers easy-to-use features and performance. The device features a single power supply, low power consumption and high speed operation. It also has both multiple byte and single byte programming modes. In addition, the device also has enhanced security features, including a read locked sector for storing encryption keys and other sensitive data.

The working principles of M29F800DB70N1 are based on electrically erasable programmable read-only memory (EEPROM). To store data in the memory, electrons are used to create electrical fluxes in the device. This creates electrical charge on the surface of the memory cell, forming a voltage. These voltages represent the data stored in the chip. To access the data stored in the chip, charge is applied to the memory cell. This creates a path of electrically charged particles, allowing the data to be read. The speed at which the data can be accessed depends on the type of memory used.

The application field of M29F800DB70N1 is mainly for embedded systems. This device is well-suited for low-end embedded systems, because of its low power consumption, single power supply and high speed operation. It is ideal for audio and video applications, where a large number of data need to be stored in a cost effective manner. This device is also ideal for automotive applications, because of its enhanced security features. Other applications where M29F800DB70N1 is relevant include medical devices, smart cards and handheld devices.

In conclusion, M29F800DB70N1 is a high performance 8 megabit Flash memory device for embedded systems that offers easy-to-use features and performance, low power consumption, single power supply and high-speed operation. Its application fields include low-end embedded systems, audio and video applications, automotive applications, medical devices, smart cards and handheld devices. It has enhanced security features, such as a read locked sector for storing encryption keys and other sensitive data. Its working principle is based on electrically erasable programmable read-only memory, whereby electrons are used to create electrical fluxes in the device in order to store data.

The specific data is subject to PDF, and the above content is for reference

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