M29F200BB70N6E Allicdata Electronics
Allicdata Part #:

M29F200BB70N6E-ND

Manufacturer Part#:

M29F200BB70N6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 2M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 2Mb (256K x 8, 128K x 16) Pa...
DataSheet: M29F200BB70N6E datasheetM29F200BB70N6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8, 128K x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: M29F200
Description

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M29F200BB70N6E is a type of memory, an integrated non-volatile memory designed to retain data even when powered off. It offers an ideal solution for applications that continually collect data, such as robotics, industrial control, navigation, gaming, and other data logging applications. It is particularly suitable for applications that require long design cycles, low power consumption, and reliable memory protection.

Application Field

M29F200BB70N6E is a type of non-volatile memory semiconductor, used in a variety of electronic components and systems. It is suitable for data logging applications, embedded systems, smart cards, IP cameras, industrial control systems, automobiles, COB memory modules, medical equipment, uninterruptible power systems, audio/video equipment, internet of things (IoT) devices, gaming devices and other innovative products.

M29F200BB70N6E is reliable and efficient for various memory requirements. It is available in pin-compatible configurations from a range of densities, and provides superior power options and performance. Moreover, its low voltage requirements, small footprint, and ability to retain data without external power make it ideal for a tremendous number of applications.

Working Principle

M29F200BB70N6E memory functions by using electrical current to store and retrieve data. As with any memory device, it can store and keep track of the contents stored in it over time. To write data to this type of memory, the current is passed through the memory cells, which then holds onto the data. It is able to retain the data in this state even when the power supply is removed.

Similarly, to read data from this type of memory, electrical current is used to move the desired data from the memory cell to the reader. This is done by passing an electric charge through the memory cell, which is then shifted to the reader, allowing it to access the data stored in the memory cell.

The M29F200BB70N6E memory is controllable through a variety of instruction commands, such as chip select, write, read, and power up/down. These instructions are sent to the memory controller, which then carries out the commands. This allows the device to be used in many applications, including data logging and control systems, where it is able to respond and act in accordance with the input or commands given.

Conclusion

M29F200BB70N6E is a type of non-volatile memory with superior performance and power capabilities, suitable for a wide range of applications. It uses electrical current to store and retrieve data and can remain powered off yet keep the data stored in it. It is controllable through a variety of instruction commands sent to the memory controller, allowing it to function in data logging and control systems.

The specific data is subject to PDF, and the above content is for reference

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